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OM6106SC

Description
Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,
CategoryDiscrete semiconductor    The transistor   
File Size45KB,4 Pages
ManufacturerOmnirel Corp.
Download Datasheet Parametric Compare View All

OM6106SC Overview

Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,

OM6106SC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerOmnirel Corp.
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.095 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-258AA
JESD-30 codeR-MSFM-P3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
OM6005SC OM6007SC OM6105SC OM6107SC
OM6006SC OM6008SC OM6106SC OM6108SC
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-258AA PACKAGE
100V Thru 500V, Up To 35 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6105SC series.
MAXIMUM RATINGS
PART NUMBER
OM6005SC/OM6105SC
OM6006SC/OM6106SC
OM6007SC/OM6107SC
OM6008SC/OM6108SC
Note:
V
DS
100 V
200 V
400 V
500 V
R
DS(on)
.065
.095
0.3
0.4
I
D
35 A
30 A
15 A
13 A
3.1
OM6105SC thru OM6108SC is supplied with zener gate protection.
OM6005SC thru OM6008SC is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6005SC - 6008SC
1 - DRAIN
WITH ZENER CLAMPS
OM6105SC - 6108SC
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R5
Supersedes 1 07 R4
3.1 - 75

OM6106SC Related Products

OM6106SC OM6008SC OM6105SC OM6107SC OM6108SC 2SA2071P5 OM6006SC OM6005SC
Description Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, Power Field-Effect Transistor, 35A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, Power transistor (-60V, -3A) Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA, Power Field-Effect Transistor, 35A I(D), 100V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-258AA,
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - incompatible incompatible
Reach Compliance Code unknown unknown unknown unknown unknown - unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 500 V 100 V 400 V 500 V - 200 V 100 V
Maximum drain current (Abs) (ID) 30 A 13 A 40 A 15 A 13 A - 30 A 35 A
Maximum drain current (ID) 30 A 13 A 35 A 15 A 13 A - 30 A 35 A
Maximum drain-source on-resistance 0.095 Ω 0.4 Ω 0.65 Ω 0.3 Ω 0.4 Ω - 0.095 Ω 0.65 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-258AA TO-258AA TO-258AA TO-258AA TO-258AA - TO-258AA TO-258AA
JESD-30 code R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 - R-MSFM-P3 R-MSFM-P3
JESD-609 code e0 e0 e0 e0 e0 - e0 e0
Number of components 1 1 1 1 1 - 1 1
Number of terminals 3 3 3 3 3 - 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C - 150 °C 150 °C
Package body material METAL METAL METAL METAL METAL - METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W 125 W 125 W 125 W - 125 W 125 W
Maximum pulsed drain current (IDM) 120 A 52 A 160 A 60 A 52 A - 120 A 160 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO NO NO NO NO - NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG - PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON - SILICON SILICON
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