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OM6023SCV

Description
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA,
CategoryDiscrete semiconductor    The transistor   
File Size164KB,4 Pages
ManufacturerOmnirel Corp.
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OM6023SCV Overview

Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA,

OM6023SCV Parametric

Parameter NameAttribute value
MakerOmnirel Corp.
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-259AA
JESD-30 codeR-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

OM6023SCV Related Products

OM6023SCV OM6022SCT OM6022SCV OM6021SCV OM6021SCT OM6024SCV OM6024SCT OM6023SCT
Description Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 30A I(D), 200V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 35A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA, Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 200 V 200 V 100 V 100 V 500 V 500 V 400 V
Maximum drain current (ID) 15 A 30 A 30 A 35 A 35 A 13 A 13 A 15 A
Maximum drain-source on-resistance 0.3 Ω 0.095 Ω 0.095 Ω 0.065 Ω 0.065 Ω 0.4 Ω 0.4 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-259AA TO-259AA TO-259AA TO-259AA TO-259AA TO-259AA TO-259AA TO-259AA
JESD-30 code R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL METAL METAL METAL METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 60 A 120 A 120 A 160 A 160 A 52 A 52 A 60 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker Omnirel Corp. - - Omnirel Corp. Omnirel Corp. Omnirel Corp. Omnirel Corp. Omnirel Corp.
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