LL5803 datasheet, PDF - EEWORLD Datasheet

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LL5803: DescriptionRectifier Diode, 1 Phase, 1 Element, 2.5A, 75V V(RRM), Silicon, DO-213AB,; CategoryDiscrete semiconductor diode; File Size69KB，1 Pages; ManufacturerBkc Semiconductors Inc.

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LL5803 Overview

Rectifier Diode, 1 Phase, 1 Element, 2.5A, 75V V(RRM), Silicon, DO-213AB,

LL5803 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Bkc Semiconductors Inc.
Reach Compliance Code	unknown
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.98 V
JEDEC-95 code	DO-213AB
JESD-30 code	O-LELF-R2
JESD-609 code	e0
Maximum non-repetitive peak forward current	35 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	200 °C
Maximum output current	2.5 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	2.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	75 V
Maximum reverse recovery time	0.025 µs
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND
Terminal location	END

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LL5803 Related Products

	LL5803	LL5806	LL5805	LL5804	LL5802
Description	Rectifier Diode, 1 Phase, 1 Element, 2.5A, 75V V(RRM), Silicon, DO-213AB,	Rectifier Diode, 1 Phase, 1 Element, 2.5A, 150V V(RRM), Silicon, DO-213AB,	Rectifier Diode, 1 Phase, 1 Element, 2.5A, 125V V(RRM), Silicon, DO-213AB,	Rectifier Diode, 1 Phase, 1 Element, 2.5A, 100V V(RRM), Silicon, DO-213AB,	Rectifier Diode, 1 Phase, 1 Element, 2.5A, 50V V(RRM), Silicon, DO-213AB,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.	Bkc Semiconductors Inc.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.98 V	0.98 V	0.98 V	0.98 V	0.98 V
JEDEC-95 code	DO-213AB	DO-213AB	DO-213AB	DO-213AB	DO-213AB
JESD-30 code	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LELF-R2
JESD-609 code	e0	e0	e0	e0	e0
Maximum non-repetitive peak forward current	35 A	35 A	35 A	35 A	35 A
Number of components	1	1	1	1	1
Phase	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	200 °C	200 °C	200 °C	200 °C	200 °C
Maximum output current	2.5 A	2.5 A	2.5 A	2.5 A	2.5 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum power dissipation	2.5 W	2.5 W	2.5 W	2.5 W	2.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	75 V	150 V	125 V	100 V	50 V
Maximum reverse recovery time	0.025 µs	0.025 µs	0.025 µs	0.025 µs	0.025 µs
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	END	END	END	END	END

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