Power Field-Effect Transistor, 14A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
| Parameter Name | Attribute value |
| Maker | Omnirel Corp. |
| Reach Compliance Code | unknown |
| Other features | HIGH RELIABILITY |
| Shell connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 14 A |
| Maximum drain-source on-resistance | 0.21 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-257AA |
| JESD-30 code | R-MSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 56 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| OMY240V | OMY440V | OMY140T | OMY340T | OMY140V | OMY240T | OMY440T | OMY340V | |
|---|---|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 14A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 7A I(D), 500V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 10A I(D), 400V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 14A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 7A I(D), 500V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, | Power Field-Effect Transistor, 10A I(D), 400V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Other features | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 500 V | 100 V | 400 V | 100 V | 200 V | 500 V | 400 V |
| Maximum drain current (ID) | 14 A | 7 A | 14 A | 10 A | 14 A | 14 A | 7 A | 10 A |
| Maximum drain-source on-resistance | 0.21 Ω | 0.88 Ω | 0.115 Ω | 0.58 Ω | 0.115 Ω | 0.21 Ω | 0.88 Ω | 0.58 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA | TO-257AA |
| JESD-30 code | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 56 A | 32 A | 56 A | 40 A | 56 A | 56 A | 32 A | 40 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | Omnirel Corp. | - | - | Omnirel Corp. | Omnirel Corp. | Omnirel Corp. | Omnirel Corp. | Omnirel Corp. |
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