OMY340T datasheet, PDF - EEWORLD Datasheet

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OMY340T: DescriptionPower Field-Effect Transistor, 10A I(D), 400V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,; CategoryDiscrete semiconductor The transistor; File Size168KB，4 Pages; ManufacturerOmnirel Corp.

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OMY340T Overview

Power Field-Effect Transistor, 10A I(D), 400V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

OMY340T Parametric

Parameter Name	Attribute value
Maker	Omnirel Corp.
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.58 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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OMY340T Related Products

	OMY340T	OMY440V	OMY140T	OMY140V	OMY240V	OMY240T	OMY440T	OMY340V
Description	Power Field-Effect Transistor, 10A I(D), 400V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 7A I(D), 500V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 14A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 14A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 14A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 7A I(D), 500V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,	Power Field-Effect Transistor, 10A I(D), 400V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V	500 V	100 V	100 V	200 V	200 V	500 V	400 V
Maximum drain current (ID)	10 A	7 A	14 A	14 A	14 A	14 A	7 A	10 A
Maximum drain-source on-resistance	0.58 Ω	0.88 Ω	0.115 Ω	0.115 Ω	0.21 Ω	0.21 Ω	0.88 Ω	0.58 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA	TO-257AA
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A	32 A	56 A	56 A	56 A	56 A	32 A	40 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	Omnirel Corp.	-	-	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.	Omnirel Corp.

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