OM5N100SA datasheet, PDF - EEWORLD Datasheet

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OM5N100SA: DescriptionPower Field-Effect Transistor, 5A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size41KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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OM5N100SA Overview

Power Field-Effect Transistor, 5A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN

OM5N100SA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
package instruction	HERMETIC SEALED, METAL, TO-254AA, 3 PIN
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	850 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	130 W
Maximum pulsed drain current (IDM)	24 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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OM1N100SA OM5N100SA OM1N100ST

OM3N100SA OM6N100SA OM3N100ST

POWER MOSFET IN HERMETIC ISOLATED

JEDEC PACKAGE

1000V, Up To 6 Amp, N-Channel

MOSFET In Hermetic Metal Package

FEATURES

•

Isolated Hermetic Metal Package

Fast Switching

Low R

DS(on)

Available Screened To MIL-19500, TX, TXV And S

Ceramic Feedthroughs Also Available

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits.

MAXIMUM RATINGS

PART NUMBER

OM1N100SA

OM3N100SA

OM5N100SA

OM6N100SA

OM3N100ST

OM1N100ST

DS(on)

8.0

5.2

3.0

2.0

5.4

8.2

1.0A

3.5A

5.0A

6.0A

3.5A

1.0A

3.1

SCHEMATIC

DRAIN

PIN CONNECTION

TO-254AA

TO-257AA

GATE

SOURCE

1 2 3

Pin 1: Drain

Pin 2: Source

Pin 3: Gate

1 2 3

4 11 R1

Supersedes 2 05 R0

3.1 - 15

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