Data Sheet No. 2N3810
Type 2N3810
Geometry
0220
Polarity PNP
Qual Level: JAN - JANS
Features:
•
•
•
•
Two electrically isolated, matched
PNP transistors as one dual unit.
Housed in
TO-78
case.
Also available in chip form using
the
0220
chip geometry.
The Min and Max limits shown are
per
MIL-PRF-19500/336
which
Semicoa meets in all cases.
Generic Part Number:
2N3810
REF: MIL-PRF-19500/336
TO-78
Maximum Ratings
T
C
= 25
o
C unless otherwise specified
Rating
Collector-Emitter voltage
Collector-Base Voltage
Emitter-Base voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25 C, one section
Derate above 25
o
C
Power Dissipation, T
A
= 25
o
C, two sections
Derate above 25 C
Operating Junction Temperature
Storage Temperature
o
o
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
60
60
5.0
50
0.5
2.86
Unit
V
V
V
mA
W
mW/
o
C
W
mW/ C
o
o
P
T
0.6
3.43
T
J
T
STG
-65 to +200
-65 to +200
C
C
o
Data Sheet No. 2N3810
Electrical Characteristics
T
C
= 25 C unless otherwise specified
o
OFF Characteristics
Collector-Base Breakdown Voltage
I
C
= 10 µA
Collector-Emitter Breakdown Voltage
I
C
= 10 mA
Emitter-Base Breakdown Voltage
I
C
= 10 µA
Collector-Base Cutoff Current
V
CB
= 50 V
Collector-Base Cutoff Current
V
CB
= 50 V, T
A
= +150 C
Collector-Base Cuttoff Current
V
CE
= 50 V, IC = 1 µA
o
Symbol
V
(BR)CBO
Min
60
Max
---
Unit
V
V
(BR)CEO
60
---
V
V
(BR)EBO
5.0
---
V
I
CBO1
---
10
nA
I
CBO2
---
10
µA
I
EBO
---
10
nA
ON Characteristics
Forward Current Transfer Ratio
I
C
= 1 µA, V
CE
= 5 V
I
C
= 10 µA, V
CE
= 5 V
I
C
= 100 µA, V
CE
= 5 V
I
C
= 500 µA, V
CE
= 5 V
I
C
= 1 mA, V
CE
= 5 V
I
C
= 10 mA, V
CE
= 5 V
I
C
= 100 µA, V
CE
= 5 V, T
A
= -55
o
C
Base-Emitter Saturation Voltage
I
C
= 100 µA, I
B
= 10 µA
I
C
= 1 mA, I
B
= 100 µA
V
CE
= 5 V, I
C
= 100 µA
Collector-Emitter Saturation Voltage
I
C
= 100 µA, I
B
= 10 µA
I
C
= 1 mA, I
B
= 100 µA
Symbol
Min
Max
Unit
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE7
75
100
150
150
150
125
60
---
---
450
450
450
---
---
---
---
---
---
---
---
---
V
BE(sat)1
V
BE(sat)2
V
BE(sat)3
---
---
---
0.7
0.8
0.7
V dc
V dc
V dc
V
CE(sat)1
V
CE(sat)2
---
---
0.2
0.25
V dc
V dc
Data Sheet No. 2N3810
Small Signal Characteristics
Forward Current Transfer Ratio (Gain Ratio)
V
CE
= 5 V, I
C
= 100 µA
Base Emitter Value, Nonsaturated Absolute
Value of Differential,
|V
BE1
- V
BE2
|
1
V
CE
= 5 V, I
C
= 10 µA
V
CE
= 5 V, I
C
= 100 µA
V
CE
= 5 V, I
C
= 10 mA
Magnitude of Small-Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 5 V, I
C
= 500 µA, f = 30 MHz
V
CE
= 5 V, I
C
= 1 mA, f = 100 MHz
Small-Signal, Short Circuit
Forward Current Transfer Ratio
V
CE
= 10 V, IC = 1.0 mA, f = 1 kHz
Small-Signal, Short Circuit
Input Impedance
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Small-Signal, Open Circuit
Output Admittance
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Small-Signal, Open Circuit
Reverse Voltage Transfer Ratio
V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Noise Figure
V
CE
= 10 V, I
C
= 100 µA, R = 3 kO, f = 100 Hz
Symbol
h
FE3-1
/ h
FE3-2
Min
0.9
Max
1.0
Unit
---
---
---
---
5.0
3.0
5.0
mV
mV
mV
|h
FE
|
1
|h
FE
|
2
h
FE
1.0
1.0
---
5.0
---
---
150
600
---
h
ie
3.0
30
kohm
h
oe
5.0
60
µohm
h
re
---
25 x 10
-4
---
F1
F2
F3
F4
---
---
---
---
7.0
3.0
2.5
3.5
dB
dB
dB
dB
V
CE
= 10 V, I
C
= 100 µA, R = 3 kO, f = 1 kHz
V
CE
= 10 V, I
C
= 100 µA, R = 3 kO, f = 10 kHz
V
CE
= 10 V, I
C
= 100 µA, R = 3 kO,
noise bandwidth 10 Hz to 15.7 kHz
Open Circuit, Output Capacitance
V
CB
= 5 V, I
E
= 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Short Circuited
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1 MHz
C
OBO
---
5.0
pF
C
IBO
---
8.0
pF
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