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K7A803600M-QC10

Description
Standard SRAM, 256KX36, 4.5ns, CMOS, PQFP100
Categorystorage    storage   
File Size290KB,20 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K7A803600M-QC10 Overview

Standard SRAM, 256KX36, 4.5ns, CMOS, PQFP100

K7A803600M-QC10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionQFP, QFP100,.63X.87
Reach Compliance Codeunknown
Maximum access time4.5 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee0
memory density9437184 bit
Memory IC TypeSTANDARD SRAM
memory width36
Humidity sensitivity level3
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum standby current0.03 A
Minimum standby current3.14 V
Maximum slew rate0.3 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
Maximum time at peak reflow temperature40
K7A803600M
K7A801800M
Document Title
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
History
Initial draft
Modify DC characteristics( Input Leakage Current test Conditions)
form V
DD
=V
SS
to V
DD
to Max.
Change DC Characteristics.
I
SB
value from 80mA to 130mA at -16
I
SB
value from 70mA to 120mA at -15
I
SB
value from 65mA to 110mA at -14
I
SB
value from 50mA to 100mA at -10
I
SB1
value from 10mA to 30mA
I
SB2
value from 10mA to 30mA
1. Remove speed bin -16.
2. Changed DC condition at Icc and parameters
Icc ; from 400mA to 420mA at -15,
from 375mA to 400mA at -14,
from 300mA to 350mA at -10,
I
SB
; from 120mA to 150mA at -15,
from 110mA to 130mA at -14,
from 100mA to 120mA at -10,
1. A
DD
x32 organization.
1. A
DD
V
DDQ
Supply voltage( 2.5V I/O )
1. Changed V
OL
Max value from 0.2V to 0.4V at 2.5V I/O.
1. Final spec Release.
2. Remove x32 organization.
1. Remove V
DDQ
Supply voltage( 2.5V I/O )
1. Add V
DDQ
Supply voltage( 2.5V I/O )
1. Change tOE from 4.0ns to 3.8ns at -14 .
1. Add tCYC 167MHz and 200MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -15,
from 400mA to 350mA at -14,
from 350mA to 300mA at -10,
1. Change tCD from 4.0ns to 3.8ns at -14 .
Draft Date
April. 10 . 1998
June .08. 1998
Remark
Preliminary
Preliminary
0.2
Aug . 27. 1998
Preliminary
0.3
Sep. 09. 1998
Preliminary
0.4
0.5
0.6
1.0
Oct. 15. 1998
Dec. 10. 1998
Dec. 23. 1998
Jan. 29. 1999
Preliminary
Preliminary
Preliminary
Final
2.0
3.0
4.0
5.0
Feb. 25. 1999
May. 13. 1999
July. 05. 1999
Nov. 19. 1999
Final
Final
Final
Final
6.0
March 14. 2000 Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
March 2000
Rev 6.0

K7A803600M-QC10 Related Products

K7A803600M-QC10 K7A801800M-QC16 K7A801800M-QC20 K7A801800M-QC14 K7A801800M-QC15 K7A801800M-QC10 K7A803600M-QC14 K7A803600M-QC15 K7A803600M-QC16 K7A803600M-QC20
Description Standard SRAM, 256KX36, 4.5ns, CMOS, PQFP100 Standard SRAM, 512KX18, 3.5ns, CMOS, PQFP100 Standard SRAM, 512KX18, 3.1ns, CMOS, PQFP100 Standard SRAM, 512KX18, 3.8ns, CMOS, PQFP100 Standard SRAM, 512KX18, 3.8ns, CMOS, PQFP100 Standard SRAM, 512KX18, 4.5ns, CMOS, PQFP100 Standard SRAM, 256KX36, 3.8ns, CMOS, PQFP100 Standard SRAM, 256KX36, 3.8ns, CMOS, PQFP100 Standard SRAM, 256KX36, 3.5ns, CMOS, PQFP100 Standard SRAM, 256KX36, 3.1ns, CMOS, PQFP100
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Maximum access time 4.5 ns 3.5 ns 3.1 ns 3.8 ns 3.8 ns 4.5 ns 3.8 ns 3.8 ns 3.5 ns 3.1 ns
Maximum clock frequency (fCLK) 100 MHz 166 MHz 200 MHz 138 MHz 149 MHz 100 MHz 138 MHz 149 MHz 166 MHz 200 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
memory density 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit 9437184 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 36 18 18 18 18 18 36 36 36 36
Number of terminals 100 100 100 100 100 100 100 100 100 100
word count 262144 words 524288 words 524288 words 524288 words 524288 words 524288 words 262144 words 262144 words 262144 words 262144 words
character code 256000 512000 512000 512000 512000 512000 256000 256000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 256KX36 512KX18 512KX18 512KX18 512KX18 512KX18 256KX36 256KX36 256KX36 256KX36
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code QFP QFP QFP QFP QFP QFP QFP QFP QFP QFP
Encapsulate equivalent code QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK FLATPACK
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260 260 NOT SPECIFIED
power supply 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
Minimum standby current 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
Maximum slew rate 0.3 mA 0.45 mA 0.49 mA 0.35 mA 0.4 mA 0.3 mA 0.35 mA 0.4 mA 0.45 mA 0.49 mA
surface mount YES YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm 0.635 mm
Terminal location QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD QUAD
Maximum time at peak reflow temperature 40 40 40 40 40 40 40 40 40 NOT SPECIFIED
package instruction QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 - QFP, QFP100,.63X.87 QFP, QFP100,.63X.87
Humidity sensitivity level 3 3 3 3 3 3 3 3 3 -
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