K9WAG08U1M
K9K8G08U0M K9NBG08U5M
FLASH MEMORY
K9XXG08UXM
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AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
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EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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K9WAG08U1M
K9K8G08U0M K9NBG08U5M
FLASH MEMORY
1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9K8G08U0M-Y,P
K9WAG08U1M-Y,P
K9WAG08U1M-I
K9NBG08U5M-P
2.70 ~ 3.60V
X8
52TLGA
TSOP1-DSP
Vcc Range
Organization
PKG Type
TSOP1
FEATURES
•
Voltage Supply
- 2.70V ~ 3.60V
•
Organization
- Memory Cell Array : (1G + 32M) x 8bit
- Data Register : (2K + 64) x 8bit
•
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
•
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 20µs(Max.)
- Serial Access : 25ns(Min.)
* K9NBG08U5M : 50ns(Min.)
•
Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC)
- Data Retention : 10 Years
•
Command Driven Operation
•
Intelligent Copy-Back with internal 1bit/528Byte EDC
•
Unique ID for Copyright Protection
•
Package :
- K9K8G08U0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9K8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9WAG08U1M-ICB0/IIB0
52 - Pin TLGA (12 x 17 / 1.0 mm pitch)
- K9NBG08U5M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(K9NBG08U5M:50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and
internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0M′s extended
reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The
K9K8G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package and another
ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.
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stm32/stm8
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