RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
| Parameter Name | Attribute value |
| Maker | SIEMENS |
| package instruction | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | BUILT IN EMITTER BALLASTING RESISTOR |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 0.3 A |
| Collector-based maximum capacity | 3.6 pF |
| Collector-emitter maximum voltage | 15 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| highest frequency band | L BAND |
| JESD-30 code | R-PDSO-G4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 5500 MHz |
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