BFG92A/X
NPN 5 GHz wideband transistor
Rev. 06 — 12 March 2008
Product data sheet
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NXP Semiconductors
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in the UHF
and microwave range.
DESCRIPTION
Silicon NPN transistor in a 4-pin,
dual-emitter SOT143B plastic
package.
PINNING
PIN
1
2
3
4
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power
gain
T
s
≤
60
°C
I
C
= i
c
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
°C;
f = 1 GHz
CONDITIONS
−
−
−
−
−
3.5
−
−
−
MIN.
−
−
−
−
0.35
5
16
11
2
TYP.
DESCRIPTION
collector
emitter
base
emitter
handbook, 2 columns
4
BFG92A/X
3
1
Top view
Marking code:
%MW.
2
MSB014
Fig.1 SOT143B.
MAX.
20
15
25
400
−
−
−
−
−
UNIT
V
V
mA
mW
pF
GHz
dB
dB
dB
Rev. 06 - 12 March 2008
2 of 13
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector leakage current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power
gain; note 1
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
°C;
f = 1 GHz
I
C
= 15 mA; V
CE
= 10 V;
T
amb
= 25
°C;
f = 2 GHz
F
noise figure
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
°C;
f = 1 GHz
Γ
s
=
Γ
opt
; I
C
= 5 mA; V
CE
= 10 V;
T
amb
= 25
°C;
f = 2 GHz
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and G
UM
MIN.
−
65
−
−
−
3.5
−
−
−
−
TYP.
−
90
0.6
0.9
0.35
5
16
11
2
3
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
290
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
T
s
≤
60
°C;
note 1
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
BFG92A/X
MAX.
20
15
2
25
400
150
175
V
V
V
UNIT
mA
mW
°C
°C
UNIT
K/W
MAX.
50
135
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
dB
S
21 2
=
10 log -------------------------------------------------------------- dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
Rev. 06 - 12 March 2008
3 of 13
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
MBB963 - 1
800
handbook, halfpage
Ptot
(mW)
600
handbook, halfpage
120
MCD074
h FE
80
400
40
200
0
0
50
100
150
Ts (
o
C)
200
0
0
10
20
I C (mA)
30
V
CE
= 10 V.
Fig.3
Fig.2 Power derating curve.
DC current gain as a function of collector
current; typical values.
0.6
handbook, halfpage
C re
(pF)
0.4
MCD075
MBB275
6
handbook, halfpage
fT
(GHz)
4
0.2
2
0
0
6
12
18
VCB (V)
24
0
0
10
20
I C (mA)
30
I
C
= i
c
= 0; f = 1 MHz.
V
CE
= 10 V; T
amb
= 25
°C;
f = 500 MHz.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
Rev. 06 - 12 March 2008
4 of 13
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFG92A/X
handbook, halfpage
30
MCD077
handbook, halfpage
30
MCD078
gain
(dB)
20
MSG
gain
(dB)
MSG
20
G UM
G UM
10
10
0
0
5
10
15
20
25
I C (mA)
0
0
5
10
15
25
20
I C (mA)
V
CE
= 10 V; f = 500 MHz.
V
CE
= 10 V; f = 1 GHz.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
Gain as a function of collector current;
typical values.
handbook, halfpage
50
MCD079
gain
(dB)
handbook, halfpage
50
MCD080
gain
(dB)
40
G UM
40
G UM
MSG
30
MSG
30
20
G max
10
20
G max
10
0
10
10
2
10
3
f
(MHz)
10
4
0
10
10
2
10
3
f (MHz)
10
4
V
CE
= 10 V; I
C
= 5 mA.
V
CE
= 10 V; I
C
= 15 mA.
Fig.8
Gain as a function of frequency; typical
values.
Fig.9
Gain as a function of frequency; typical
values.
Rev. 06 - 12 March 2008
5 of 13
Embedded System
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