BCP55T series
Rev. 1 — 29 April 2019
60 V, 1 A NPN medium power transistors
Product data sheet
1. Product profile
1.1. General description
NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
Package
Nexperia
BCP55T
BCP55-10T
BCP55-16T
SOT223
JEDEC
SC-73
BCP52T
BCP52-10T
BCP52-16T
NPN comlement
1.2. Features and benefits
•
•
•
•
High collector current capability I
C
and I
CM
Three current gain selections
High power dissipation capability
AEC-Q101 qualified
1.3. Applications
•
•
•
•
•
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4. Quick reference data
Table 2. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CEO
I
C
I
CM
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
≤ 1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
60
1
2
Unit
V
A
A
Nexperia
BCP55T series
60 V, 1 A NPN medium power transistors
Parameter
DC current gain
BCP55T
BCP55-10T
BCP55-16T
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
63
63
100
-
-
-
250
160
250
Conditions
Min
Typ
Max
Unit
Symbol
h
FE
[1]
pulsed; t
p
≤ 300 μs; δ ≤ 0.02
2. Pinning information
Table 3. Pinning
Pin
1
2
3
4
Symbol
B
C
E
C
Description
base
collector
emitter
collector
1
2
3
Simplified outline
4
Graphic symbol
C
B
E
sym123
3. Ordering information
Table 4. Ordering information
Type number
Package
Name
BCP55T
BCP55-10T
BCP55-16T
SC-73
Description
plastic, surface-mounted package with increased heatsink;
4 leads
Version
SOT223
4. Marking
Table 5. Marking
Type number
BCP55T
BCP55-10T
BCP55-16T
Marking code
BCP55T
P5510T
P5516T
BCP55T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 29 April 2019
2 / 14
Nexperia
BCP55T series
60 V, 1 A NPN medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
single pulse; t
p
≤ 1 ms
T
amb
≤ 25 °C
[1]
[2]
[3]
[4]
[5]
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Conditions
open emitter
open base
open collector
single pulse; t
p
≤ 1 ms
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-55
-65
Max
60
60
5
1
2
0.2
0.3
0.6
1
1.3
1.3
1.8
150
150
150
Unit
V
V
V
A
A
A
A
W
W
W
W
W
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm .
Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm.
2
P
tot
(W)
1.6
(2), (3)
(1)
aaa-023487
1.2
(4)
0.8
(5)
0.4
0
-75
2
-25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB; 4-layer copper; 1 cm
2
(2) FR4 PCB; single-sided copper; 6 cm
(3) FR4 PCB; 4-layer copper; standard footprint
2
(4) FR4 PCB; single-sided copper; 1 cm
(5) FR4 PCB; single-sided copper; standard footprint
Fig. 1.
Power derating curves
BCP55T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 29 April 2019
3 / 14
Nexperia
BCP55T series
60 V, 1 A NPN medium power transistors
aaa-023510
10
I
C
(A)
1
t
p
= 10 µs
100 µs
10
-1
DC
10
-2
DC; FR4 PCB, 4-layer copper;
collector mounting pad 1 cm
2
1 ms
10 ms
100 ms
1s
10
-3
10
-1
1
10
10
2
V
CE
(V)
10
3
FR4 PCB; single-sided copper; standard footprint
single pulse; T
amb
= 25 °C
Fig. 2.
Safe operating area; junction to ambient; continous and peak collector currents as a funtion of collecor-
emitter voltage
BCP55T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 29 April 2019
4 / 14
Nexperia
BCP55T series
60 V, 1 A NPN medium power transistors
6. Thermal characteristics
Table 7. Thermal characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
R
th(j-a)
Parameter
thermal resistance from junction to ambient
Conditions
in free air
[1]
[2]
[3]
[4]
[5]
R
(j-sp)
[1]
[2]
[3]
[4]
[5]
Min
-
Typ
-
Max
209
125
97
Unit
K/W
K/W
K/W
K/W
K/W
K/W
-
-
-
-
-
-
97
70
18
thermal resistance from junction to solder point
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm .
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm .
Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm .
10
3
Z
th(j-a)
(K/W)
10
2
aaa-023489
duty cycle = 1
0.50
0.20
0.10
0.75
0.33
10
0.05
1
10
-5
0.02
0.01
0
10
-4
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB; single-sided copper; tin-plated and standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCP55T_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2019. All rights reserved
Product data sheet
Rev. 1 — 29 April 2019
5 / 14
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