®
BCX52-16
BCX53-16
SMALL SIGNAL PNP TRANSISTORS
PRELIMINARY DATA
Ordering Code
BCX52-16
BCX53-16
s
Marking
X52
X53
s
s
s
SILICON EPITAXIAL PLANAR PNP MEDIUM
VOLTAGE TRANSISTORS
SOT-89 PLASTIC PACKAGE FOR SURFACE
MOUNTING CIRCUITS
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPES ARE
BCX55-16 AND BCX56-16 RESPECTIVELY
SOT-89
APPLICATIONS
s
MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
s
OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
s
AUTOMOTIVE POST-VOLTAGE
REGULATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
CER
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
March 2003
Parameter
BCX52-16
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector-Emitter Voltage (R
BE
= 1KΩ)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
BCX53-16
-100
-80
-100
-5
-1
-1.5
-0.1
-0.2
1.3
-65 to 150
150
-60
-60
-60
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
1/4
BCX52-16 BCX53-16
THERMAL DATA
R
thj-amb
•
Thermal Resistance Junction-Ambient
2
Max
96.1
o
C/W
•
Device mounted on a PCB area of 1 cm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= -30 V
V
CB
= -30 V
I
C
= -100
µA
for
BCX52-16
for
BCX53-16
I
C
= -20 mA
for
BCX52-16
for
BCX53-16
I
C
= -100
µA
for
BCX52-16
for
BCX53-16
I
E
= -10
µA
T
j
= 125
o
C
-60
-100
-60
-80
-60
-100
-5
Min.
Typ.
Max.
-100
-10
Unit
nA
µA
V
V
V
V
V
V
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CER
Collector-Emitter
Breakdown Voltage
(R
BE
= 1 KΩ)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
V
(BR)EBO
V
CE(sat)
∗
V
BE(on)
∗
h
FE
∗
I
C
= -500 mA
I
C
= -500 mA
I
C
= -5 mA
I
C
= -150 mA
I
C
= -500 mA
I
B
= -50 mA
V
CE
= -2 V
V
CE
= -2 V
V
CE
= -2 V
V
CE
= -2 V
f = 20 MHz
40
100
25
50
-0.5
-1
V
V
250
MHz
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -5 V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1.5 %
2/4
BCX52-16 BCX53-16
SOT-89 MECHANICAL DATA
mm
MIN.
A
B
B1
C
C1
D
D1
E
e
e1
H
L
1.4
0.44
0.36
0.35
0.35
4.4
1.62
2.29
1.42
2.92
3.94
0.89
TYP.
MAX.
1.6
0.56
0.48
0.44
0.44
4.6
1.83
2.6
1.57
3.07
4.25
1.2
MIN.
55.1
17.3
14.2
13.8
13.8
173.2
63.8
90.2
55.9
115.0
155.1
35.0
mils
TYP.
MAX.
63.0
22.0
18.9
17.3
17.3
181.1
72.0
102.4
61.8
120.9
167.3
47.2
DIM.
P025H
3/4
BCX52-16 BCX53-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4
京公网安备 11010802033920号
EEWORLD
