256K X 36, 512K X 18
3.3V Synchronous SRAMs
3.3V I/O, Burst Counter
Pipelined Outputs, Single Cycle Deselect
Features
256K x 36, 512K x 18 memory configurations
Supports high system speed:
– 200MHz 3.1ns clock access time
– 183MHz 3.3ns clock access time
LBO
input selects interleaved or linear burst mode
Self-timed write cycle with global write control (GW), byte
write enable (BWE), and byte writes (BWx)
3.3V core power supply
Power down controlled by ZZ input
3.3V I/O supply (V
DDQ
)
Packaged in a JEDEC Standard 100-pin thin plastic quad
flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch
ball grid array (fBGA).
Advance
Information
IDT71V67613
IDT71V67813
x
x
x
x
x
x
x
x
Description
The IDT71V67613/7813 are high-speed SRAMs organized as
256K x 36/512K x 18. The IDT71V67613/7813 SRAMs contain write,
data, address and control registers. Internal logic allows the SRAM to
generate a self-timed write based upon a decision which can be left until
the end of the write cycle.
The burst mode feature offers the highest level of performance to the
system designer, as the IDT71V67613/7813 can provide four cycles of
data for a single address presented to the SRAM. An internal burst address
counter accepts the first cycle address from the processor, initiating the
access sequence. The first cycle of output data will be pipelined for one
cycle before it is available on the next rising clock edge. If burst mode
operation is selected (ADV=LOW), the subsequent three cycles of output
data will be available to the user on the next three rising clock edges. The
order of these three addresses are defined by the internal burst counter
and the
LBO
input pin.
The IDT71V67613/7813 SRAMs utilize IDT’s latest high-performance
CMOS process and are packaged in a JEDEC standard 14mm x 20mm
100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array
(BGA) and 165 fine pitch ball grid array (fBGA).
Pin Description Summary
A
0
-A
18
CE
CS
0
,
CS
1
OE
GW
BWE
BW
1
,
BW
2
,
BW
3
,
BW
4
(1)
CLK
ADV
ADSC
ADSP
LBO
ZZ
TMS
TDI
TCK
TDO
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enable
Chip Selects
Output Enable
Global Write Enable
Byte Write Enable
Individual Byte Write Selects
Clock
Burst Address Advance
Address Status (Cache Controller)
Address Status (Processor)
Linear / Interleaved Burst Order
Sleep Mode
Test Mode Select
Test Data Input
Test Clock
Test Data Output
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
I/O
Supply
Supply
Synchronous
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Synchronous
Synchronous
DC
Asynchronous
N/A
N/A
N/A
N/A
Synchronous
N/A
N/A
5312 tbl 01
NOTE:
1.
BW
3
and
BW
4
are not applicable for the IDT71V67813.
JULY 2001
1
DSC-5312/01
©2000 Integrated Device Technology, Inc.
IDT71V67613, IDT71V67813, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Definitions
(1)
Symbol
A
0
-A
18
ADSC
ADSP
ADV
Pin Function
Address Inputs
Address Status
(Cache Controller)
Address Status
(Processor)
Burst Address
Advance
Byte Write Enable
I/O
I
I
I
I
Active
N/A
LOW
LOW
LOW
Description
Synchronous Address inputs. The address register is triggered by a combination of the
rising edge of CLK and
ADSC
Low or
ADSP
Low and
CE
Low.
Synchronous Address Status from Cache Controller.
ADSC
is an active LOW input that is
used to load the address registers with new addresses.
Synchronous Address Status from Processor.
ADSP
is an active LOW input that is used to
load the address registers with new addresses.
ADSP
is gated by
CE.
Synchronous Address Advance.
ADV
is an active LOW input that is used to advance the
internal burst counter, controlling burst access after the initial address is loaded. When the
input is HIGH the burst counter is not incremented; that is, there is no address advance.
Synchronous byte write enable gates the byte write inputs
BW
1
-BW
4
. If
BWE
is LOW at the
rising edge of CLK then
BWx
inputs are passed to the next stage in the circuit. If
BWE
is
HIGH then the byte write inputs are blocked and only
GW
can initiate a write cycle.
Synchronous byte write enables.
BW
1
controls I/O
0-7
, I/O
P1
,
BW
2
controls I/O
8-15
, I/O
P2
, etc.
Any active byte write causes all outputs to be disabled.
Synchronous chip enable.
CE
is used with CS
0
and
CS
1
to enable the IDT71V67613/7813.
CE
also gates
ADSP.
This is the clock input. All timing references for the device are made with respect to this
input.
Synchrono us active HIGH chip select. CS
0
is used with
CE
and
CS
1
to enable the chip.
Synchronous active LOW chip select.
CS
1
is used with
CE
and CS
0
to enable the chip.
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW
on the rising edge of CLK.
GW
supersedes individual byte write enables.
Synchronous data input/output (I/O) pins. Both the data input path and data output path are
registered and triggered by the rising edge of CLK.
Asynchronous burst order selection input. When
LBO
is HIGH, the interleaved burst
sequence is selected. When
LBO
is LOW the Line ar burst sequence is selected.
LBO
is a
static input and must not change state while the device is operating.
Asynchronous output enable. When
OE
is LOW the data output drivers are enabled on the
I/O pins if the chip is also selected. When
OE
is HIGH the I/O pins are in a high-
impedance state.
Gives input command for TAP controller; sampled on rising edge of TCK.
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK.
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured on
rising edge of TCK, while test outputs are driven from falling edge of TCK.
Serial output of registers placed between TDI and TDO. This output is active depending on
the state of the TAP controller.
3.3V core power supply.
3.3V I/O Supply.
Ground.
NC pins are not electrically connected to the device.
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the
IDT71V67613/7813 to its lowest p ower consumption level. Data retention is guaranteed in
Sleep Mode.
5312 tbl 02
BWE
I
LOW
BW
1
-BW
4
CE
CLK
CS
0
CS
1
GW
I/O
0
-I/O
31
I/O
P1
-I/O
P4
LBO
Individual Byte
Write Enables
Chip Enable
Clock
Chip Select 0
Chip Select 1
Global Write
Enable
Data Input/Output
Linear Burst Order
I
I
I
I
I
I
I/O
I
LOW
LOW
N/A
HIGH
LOW
LOW
N/A
LOW
OE
Output Enable
I
LOW
TMS
TDI
TCK
TDO
V
DD
V
DDQ
V
SS
NC
ZZ
Test Mode Select
Test Data Input
Test Clock
Test Data Output
Power Supply
Power Supply
Ground
No Connect
Sleep Mode
I
I
I
O
N/A
N/A
N/A
N/A
I
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
HIGH
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
2
IDT71V67613, IDT71V67813, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Functional Block Diagram
LBO
ADV
CEN
Burst
Sequence
INTERNAL
ADDRESS
CLK
ADSC
ADSP
CLK EN
ADDRESS
REGISTER
Byte 1
Write Register
2
Binary
Counter
CLR
Burst
Logic
18/19
A0*
A1*
Q0
Q1
256K x 36/
512K x 18-
BIT
MEMORY
ARRAY
2
18/19
A
0–
A
17/18
GW
BWE
BW
1
A
0
,A
1
A
2
–A
18
36/18
36/18
Byte 1
Write Driver
9
Byte 2
Write Register
Byte 2
Write Driver
BW
2
Byte 3
Write Register
9
Byte 3
Write Driver
BW
3
Byte 4
Write Register
9
Byte 4
Write Driver
BW
4
9
OUTPUT
REGISTER
CE
CS
0
CS
1
D
Q
Enable
Register
DATA INPUT
REGISTER
CLK EN
ZZ
Powerdown
D
Q
Enable
Delay
Register
OE
OUTPUT
BUFFER
OE
I/O
0
–I/O
31
I/O
P1
–I/O
P4
36/18
,
5312 drw 01
6.42
3
IDT71V67613, IDT71V67813, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Absolute Maximum Ratings
(1)
Symbol
V
TERM
(2)
V
TERM
(3,6)
Rating
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Operating Temperature
Temperature
Under Bias
Storage
Temperature
Power Dissipation
DC Output Current
Commercial
-0.5 to +4.6
-0.5 to V
DD
-0.5 to V
DD
+0.5
-0.5 to V
DDQ
+0.5
-0 to +70
-55 to +125
-55 to +125
2.0
50
Unit
V
V
V
V
o
Recommended Operating
Temperature and Supply Voltage
Grade
Commercial
Temperature
(1)
0°C to +70°C
V
SS
0V
V
DD
3.3V±5%
V
DDQ
3.3V±5%
5312 tbl 04
NOTE:
1. T
A
is the "instant on" case temperature.
V
TERM
(4,6)
V
TERM
(5,6)
T
A
(7)
T
BIAS
T
STG
P
T
I
OUT
Recommended DC Operating
Conditions
(V
DDQ
= 3.3V)
Symbol
V
DD
Parameter
Core Supply Voltage
I/O Supply Voltage
Supply Voltage
Input High Voltage - Inputs
Input High Voltage - I/O
Input Low Voltage
Min.
3.135
3.135
0
2.0
2.0
-0.3
(1)
Typ.
3.3
3.3
0
____
C
C
C
Max.
3.465
3.465
0
V
DD
+0.3
V
DDQ
+0.3
0.8
Unit
V
V
V
V
V
V
5312 tbl 05
o
V
DDQ
V
SS
V
IH
o
W
mA
5312 tbl 03
V
IH
V
IL
____
____
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
DD
terminals only.
3. V
DDQ
terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V
DDQ
during power supply ramp up.
7. T
A
is the "instant on" case temperature.
NOTE:
1. V
IL
(min) = -1.0V for pulse width less than t
CYC/2
, once per cycle.
100-Pin TQFP Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
5
7
Unit
pF
pF
5312 tbl 07
165 fBGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
TDB
TDB
Unit
pF
pF
5312 tbl 07b
119 BGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
I/O
Parameter
(1)
Input Capacitance
I/O Capacitance
Conditions
V
IN
= 3dV
V
OUT
= 3dV
Max.
7
7
Unit
pF
pF
5312 tbl 07a
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
4
IDT71V67613, IDT71V67813, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Single Cycle Deselect
Advance Information
Commercial Temperature Range
Pin Configuration 256K x 36, 100-Pin TQFP
A
6
A
7
CE
CS
0
BW
4
BW
3
BW
2
BW
1
CS
1
V
DD
V
SS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
8
A
9
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
5312 drw 02
I/O
P3
I/O
16
I/O
17
V
DDQ
V
SS
I/O
18
I/O
19
I/O
20
I/O
21
V
SS
V
DDQ
I/O
22
I/O
23
V
DD
/ NC
(1)
V
DD
NC
V
SS
I/O
24
I/O
25
V
DDQ
V
SS
I/O
26
I/O
27
I/O
28
I/O
29
V
SS
V
DDQ
I/O
30
I/O
31
I/O
P4
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
I/O
P2
I/O
15
I/O
14
V
DDQ
V
SS
I/O
13
I/O
12
I/O
11
I/O
10
V
SS
V
DDQ
I/O
9
I/O
8
V
SS
NC
V
DD
ZZ
(2)
I/O
7
I/O
6
V
DDQ
V
SS
I/O
5
I/O
4
I/O
3
I/O
2
V
SS
V
DDQ
I/O
1
I/O
0
I/O
P1
,
LBO
A
5
A
4
A
3
A
2
A
1
A
0
NOTES:
1. Pin 14 can either be directly connected to V
DD
, or connected to an input voltage
≥
V
IH
, or left unconnected.
2. Pin 64 can be left unconnected and the device will always remain in active mode.
NC
NC
V
SS
V
DD
NC
A
17
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Top View
6.42
5
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