Ordering number : ENN8235
CPH5838
CPH5838
Features
•
•
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
DC / DC converters.
Composite type with a P-Channel Sillicon MOSFET (MCH3307) and a Schottky Barrier Diode (SBS004)
contained in one package facilitating high-density mounting.
[MOSFET]
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
2.5V drive.
[SBD]
•
Short reverse recovery time.
•
Low forward voltage.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
15
15
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm
2
!0.8mm)
1unit
--20
±10
--1
--4
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
Symbol
Conditions
Ratings
Unit
Marking : XQ
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22805PE TS IM TB-00001210 No.8235-1/6
CPH5838
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
VR
VF 1
VF 2
IR
C
trr
Rth(j-a)
IR=1mA
IF=0.5A
IF=1A
VR=6V
VR=10V, f=1MHz, cycle
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (900mm
2
!0.8mm)
15
0.30
0.35
42
15
110
0.35
0.40
500
V
V
V
µA
pF
ns
°C
/ W
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGS=±8V, VDS=0
VDS=--10V, ID=-
-1mA
VDS=--10V, ID=-
-500mA
ID=--500mA, VGS=-
-4V
ID=--300mA, VGS=-
-2.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=-
-4V, ID=-
-1A
VDS=--10V, VGS=-
-4V, ID=-
-1A
VDS=--10V, VGS=-
-4V, ID=-
-1A
IS=--1A, VGS=0
--0.4
0.72
1.2
380
540
115
23
15
8
6
15
7
1.5
0.4
0.3
--0.89
--1.2
500
760
--20
--1
±10
--1.4
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Package Dimensions
unit : mm
2171A
0.4
5
4
3
0.15
Electrical Connection
5
4
3
1.6
0.6
2.8
0.05
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
1
2
0.6
0.2
Top view
1
0.95
2.9
2
0.7
0.9
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
SANYO : CPH5
0.2
No.8235-2/6
CPH5838
Switching Time Test Circuit
[MOSFET]
VIN
0V
--4V
VIN
ID= --500mA
RL=20Ω
VOUT
50Ω
10µs
--5V
trr
100Ω
10Ω
trr Test Circuit
[SBD]
VDD= --10V
Duty≤10%
100mA
D
PW=10µs
D.C.≤1%
G
CPH5838
P.G
50Ω
S
--1.0
ID -- VDS
V
[MOSFET]
--2.0
--1.8
--1.6
ID -- VGS
--2
5
°
C
Ta=
100mA
[MOSFET]
75
°
C
--2.5
--4.
0
Drain Current, ID -- A
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
.
--2
0V
Drain Current, ID -- A
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
0
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
--1.5
--2.0
--3.0
1000
Drain-to-Source Voltage, VDS -- V
IT03501
RDS(on) -- VGS
[MOSFET]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1000
900
800
700
600
500
400
300
200
100
0
--60
--40
IT03502
Gate-to-Source Voltage, VGS -- V
[MOSFET]
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
900
800
700
600
500
400
300
200
100
0
0
--2
--4
--6
--8
--10
IT03503
25
--0.2
--0.5A
ID= --0.3A
I D=
Ta
=7
5
°
C
--2
5
°
C
VGS= --1.5V
°
C
V
--2.5
S=
A, VG
--0.3
V
= --4.0
5A, V GS
0.
I D= --
--20
0
20
40
60
80
100
120
25
°
C
140
160
IT03504
--0.8
--2
--0.9
--3
.0
.5V
VDS= --10V
V
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
No.8235-3/6
10mA
CPH5838
3
y
fs -- ID
[MOSFET]
VDS= --10V
Forward Transfer Admittance,
y
fs -- S
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IF -- VSD
[MOSFET]
VGS=0
1.0
7
5
--
Ta=
C
25
°
C
75
°
3
2
Forward Current, IF -- A
C
25
°
Ta=
75
°
C
25
°
C
--0.7
0.1
--0.01
2
3
5
7
--0.1
2
3
5
Drain Current, ID -- A
3
2
--1.0
IT03505
7
--0.01
--0.4
--0.5
--0.6
--25
°
C
--0.8
--0.9
--1.0
--1.1
--1.2
SW Time -- ID
[MOSFET]
VDD= --10V
VGS= --4V
Ciss, Coss, Crss -- pF
3
2
Ciss, Coss, Crss -- VDS
[MOSFET]
f=1MHz
Diode Forward Voltage, VSD -- V
IT03506
Switching Time, SW Time -- ns
100
7
5
3
2
10
7
5
3
2
1.0
--0.1
10
2
3
5
7
--1.0
2
3
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Ciss
100
7
5
td(off)
td(on)
tf
3
2
tr
Coss
Crss
Drain Current, ID -- A
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT03507
VGS -- Qg
[MOSFET]
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
1.4
1.6
--0.01
--0.01
Drain-to-Source Voltage, VDS -- V
IT03508
ASO
[MOSFET]
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --1A
Drain Current, ID -- A
IDP= --4A
10
<100µs
1m
s
m
s
ID= --1A
D
C
0m
op
s
er
at
io
n
10
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm
2
!0.8mm)
1unit
2 3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
2
3
Total Gate Charge, Qg -- nC
1.0
IT03509
PD -- Ta
M
ou
Drain-to-Source Voltage, VDS -- V
IT09172
[MOSFET]
Allowable Power Dissipation, PD -- W
0.9
0.8
nt
ed
on
ac
0.6
er
am
ic
bo
a
rd
0.4
(6
00
m
m
2
!
0.
0.2
8m
m
)1
un
it
160
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
IT09178
No.8235-4/6
CPH5838
3
2
1.0
IF -- VF
[SBD]
Reverse Current, IR -- mA
Forward Current, IF -- A
7
5
3
2
0.1
5
°
C
12
=
Ta
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
5
IR -- VR
Ta=125
°
C
100
°C
[SBD]
°
C
25
75°C
10
0
°
C
50
°
C
50
°C
25
°C
5
3
2
0.01
0
0.1
0.2
75
°
C
0.3
7
0.4
0.5
IT00622
10
15
IT00623
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
1000
7
5
Average Forward Power Dissipation, PF(AV) -- W
0.8
0.7
0.6
0.5
0.4
PF(AV) -- IO
[SBD]
C -- VR
[SBD]
f=1MHz
Interterminal Capacitance, C -- pF
(1) Rectangular wave
θ=60°
(2) Rectangular wave
θ=120°
(3) Rectangular wave
θ=180°
(4) Sine wave
θ=180°
(1)
(3)
(2) (4)
3
2
100
7
5
3
2
10
7
5
3
2
1.0
1.0
2
3
5
7
2
IT00625
Rectangular wave
0.3
θ
0.2
0.1
0
0
0.2
0.4
0.6
0.8
180°
360°
1.0
1.2
1.4
IT00624
Sine wave
360°
10
Average Forward Current, IO -- A
12
Reverse Voltage, VR -- V
IFSM -- t
Is
20ms
t
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
IT00626
No.8235-5/6
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