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FR3K

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size136KB,3 Pages
ManufacturerCHENG-YI ELECTRONIC CO., LTD.
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FR3K Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB

FR3A thru FR3K
FAST SWITCHING SURFACE
MOUNT RECTIFIER
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
-50 TO 800 VOLTS
CURRENT
-3.0 Amperes
SMC/DO-214AB
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Easy pick and place
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Glass passivated junction
High temperature soldering
260
o
C/10 seconds at terminals
Fast recovery times for high efficiency
.108(2.75)
.128(3.25)
.220(5.59)
.245(6.22)
.260(6.60)
.280(7.11)
.006(.152)
.012(.305)
.079(2.00)
.103(2.62)
.002(.051)
.008(.203)
.305(7.75)
.320(8.13)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Indicated by cathode band
Standard Packaging: 16mm tape (EIA-481)
Weight: 0.007 ounces, 0.21 gram
.030(0.76)
.050(1.27)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, reistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS
FR3A
50
35
50
FR3B
100
70
100
FR3D
200
140
200
3.0
FR3G
400
280
400
FR3J
600
420
600
FR3K
800
560
800
UNITS
V
V
V
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T
L=75 C
0
V
RRM
V
RMS
V
DC
I
(AV)
Peak Forward Surge Current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25
0
C
@ TA=125 C
0
I
FSM
V
F
I
R
T
RR
C
J
R
R
JL
JA
150
100
A
1.3
10.0
300
250
60.0
V
A
500
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance (Note 3)
Operating and Storage Temperature Range
nS
pF
0
15
50
-50 to +150
C/W
0
T
J
, T
STG
C
Notes : 1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MH
Z
and Applied Vr=4.0 volts.
3. 8.0mm
2
(.013mm thick) land areas.

FR3K Related Products

FR3K FR3A FR3J FR3D FR3B FR3G
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
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