LAB
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
H=
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
1 2 .6 (0 .4 9 6 )
1 2 .8 (0 .5 0 4 )
2 5 .2 (0 .9 9 2 )
2 5 .4 (1 .0 0 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
SEME
BFC15
4TH GENERATION MOSFET
Hex Nut M 4
(4 places)
1
R
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
4
3.3 (0 .1 2 9)
3.6 (0.14 3 )
1 4 .9 (0.58 7 )
1 5 .1 (0.59 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
3 8 .0 (1.4 9 6 )
3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 )
(2 P lac e s)
V
DSS
I
D(cont)
R
DS(on)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
1000V
33A
Ω
0.26Ω
Terminal 1
Source*
Terminal 3
Gate
Terminal 2
Terminal 4
Drain
Source*
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
, I
LM
V
GS
P
D
T
J
, T
STG
T
L
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
and Inductive Current Clamped
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
1000
33
132
±30
690
5.52
–25 to 125
300
V
A
A
V
W
W / °C
°C
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
Characteristic
Drain – Source Breakdown Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
Test Conditions
V
GS
= 0V , I
D
= 250µA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
=10V , I
D
= 0.5 I
D
[Cont.]
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 5.0mA
2
Min.
1000
33
0.26
250
1000
±100
4
Typ.
Max. Unit
V
A
Ω
µA
nA
V
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
LAB
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6Ω
Min.
Typ. Max. Unit
11610 14000
1345
415
465
83
61
21
19
70
14
1880
620
700
125
90
40
40
105
30
ns
nC
pF
SEME
BFC15
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.]
dl
s
/ dt = 100A/µs
625
25
1250
49
Test Conditions
Min.
Typ.
Max. Unit
33
A
132
1.8
2000
70
V
ns
µC
PACKAGE CHARACTERISTICS
L
D
L
S
V
Isolation
C
Isolation
Torque
Characteristic
Internal Drain Inductance
(Measured From Drain Terminal to Centre of Die)
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
f = 1MHz
2500
70
13
Min.
Typ.
3
5
Max. Unit
nH
V
pF
in–lbs
Maximum Torque for Device Mounting Screws and Electrical Terminations
THERMAL CHARACTERISTICS
R
θJC
R
θCS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Min.
Typ.
0.05
Max. Unit
0.18
°C/W
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
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