BFP690
NPN Silicon Germanium RF Transistor
Preliminary data
For medium power amplifiers
Maxim. available Gain
G
ma
= 17 dB at 1.8 GHz
Gold metallization for high reliability
70 GHz
f
T
- Silicon Germanium technology
4
5
3
2
1
VPW05980
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point
2)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFP690
Maximum Ratings
Parameter
Marking
R9s
1=B
Pin Configuration
2=E
3=C
4=C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SCT595
Value
Unit
5=E
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
4
13
13
1.2
350
20
1000
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
80°C
Unit
60
K/W
Oct-30-2002
BFP690
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0 A
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0 A
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0 A
DC current gain
I
C
= 200 mA,
V
CE
= 3 V
h
FE
100
180
250
-
I
EBO
-
-
10
µA
I
CBO
-
-
100
nA
V
(BR)CEO
4
4.5
-
V
typ.
max.
Unit
2
Oct-30-2002
BFP690
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 200 mA,
V
CE
= 3 V,
f
= 0.5 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz
C
cb
C
ce
C
eb
F
Unit
-
-
-
-
37
0.6
1.25
3
-
-
-
-
GHz
pF
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 35 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 35 mA,
V
CE
= 3 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
dB
-
-
1
1.2
-
-
Power gain, maximum available
1)
I
C
= 200 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 200 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
G
ma
-
-
|
S
21e
|
2
,
-
-
IP
3
17.5
13
-
-
dB
Transducer gain
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 200 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
1dB Compression point at output
1
G
1/2
ma
= |
S
21
/
S
12
| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
I
C
= 200 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
I
C
= 200 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 3 GHz
I
C
= 200 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
11
6.5
29
-
-
-
dBm
,
-
P
-1dB
-
19.5
-
,
from 0.1 MHz to 6 GHz
3
Oct-30-2002
BFP690
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
fF
ps
A
V
ns
-
-
-
-
-
V
fF
-
V
eV
K
2
-0.0065
All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
R C B S
C B C C
L C C
C
B F P 6 9 0 _ C h ip
B
B
L B B
L B C
C B E C
S
R C C S
L C B
E
R C E S
C
L E C
L E B
C C E O
T =
2 5 °C
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
340
340
Valid up to 6GHz
4
Oct-30-2002
Itf = 2 9 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
E
LBC =
LCC =
LEC =
LBB =
LCB =
LEB =
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
RBS =
RCS =
RES =
15
4
4
900
700
130
864.4
399.9
450
535
135
130
190
pH
pH
pH
pH
pH
pH
fF
fF
fF
fF
fF
fF
-
V
-
deg
-
fF
-
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
TITF1
1.41
1000
2
2
1.8
0.3836
1.592
1.9
2.9
0.6
0.2
0.27
3
fA
-
V
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
KF =
TITF2
450
0.9
40
45
0.4442
0.14
0.8
5
0
0.5
688.1
-1.42
0.8
1.046E-11
1.0E-5
-
A
-
mA
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.025
145
1
1.2
10.61
0.4312
0.3
0.6
477.5
1
0.6
1.078
298
-
fA
-
pA
mA
BFP690
Total power dissipation
P
tot
= (
T
S
)
Permissible Pulse Load
R
thJS
=
(
t
p
)
1100
mW
900
800
700
600
500
400
300
200
100
0
0
15
30
45
60
75
90 105 120
°C
150
R
thJS
10
1
P
tot
10
2
pF
P
totmax
/
P
totDC
-
C
CB
10
1
10
0 -7
10
10
-6
10
P
totmax
/
P
totDC
=
(
t
p
)
2
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-5
-4
-3
-2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
10
s
10
0
0
0
2
4
6
8
10
t
p
5
Oct-30-2002
Permissible Pulse Load
10
2
K/W
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
°C
10
0
T
S
t
p
Collector-base capacitance
C
cb
= (
V
CB
)
f
= 1MHz
V
13
V
CB
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