MT5HTF3272KY-53E datasheet, PDF

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MT5HTF3272KY-53E: DescriptionDDR DRAM Module, 32MX72, 0.5ns, CMOS, PDMA244,; Categorystorage storage; File Size242KB，15 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT5HTF3272KY-53E Overview

DDR DRAM Module, 32MX72, 0.5ns, CMOS, PDMA244,

MT5HTF3272KY-53E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
package instruction	DIMM, DIMM244,24
Reach Compliance Code	compliant
Maximum access time	0.5 ns
Maximum clock frequency (fCLK)	267 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N244
memory density	2415919104 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Number of terminals	244
word count	33554432 words
character code	32000000
Maximum operating temperature	55 °C
Minimum operating temperature
organize	32MX72
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM244,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum slew rate	1.625 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL

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256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM

Features

DDR2 SDRAM Mini-RDIMM

MT5HTF3272(P)K – 256MB

For component data sheets, refer to Micron’s Web site:

www.micron.com

Features

• 244-pin, mini-registered dual in-line memory

module (mini-RDIMM)

• Fast data transfer rates: PC-3200, PC2-4200, or

PC2-5300

• Supports ECC error detection and correction

• 256MB (32 Meg x 72)

• V

= V

Q = +1.8V

• V

DDSPD

= +1.7V to +3.6V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Single rank

• Multiple internal device banks for concurrent

operation

• Supports duplicate output strobe (RDQS/RDQS#)

• Programmable CAS# latency (CL)

• Posted CAS# additive latency (AL)

• WRITE latency = READ latency - 1

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Serial presence-detect (SPD) with EEPROM

• Gold edge contacts

Figure 1:

244-Pin Mini-RDIMM (MO-244 R/C B)

Module height: 30.0mm (1.18in)

Options

Marking

• Parity

• Operating temperature

– Commercial (0°C

≤

≤ +70°C)

None

– Industrial (–40°C

≤

≤ +85°C)

• Package

– 244-pin mini-RDIMM (Pb-free)

• Frequency/CAS latency

– 3.0ns @ CL = 5 (DDR2-667)

-667

– 3.75ns @ CL = 4 (DDR2-533)

-53E

– 5.0ns @ CL = 3 (DDR2-400)

-40E

• PCB height

– 30mm (1.18in)

Notes: 1. Contact Micron for industrial temperature

module offerings.

2. CL = CAS (READ) latency; registered mode

will add one clock cycle to CL.

Table 1:

Speed

Grade

-667

-53E

-40E

Key Timing Parameters

Data Rate (MT/s)

Industry Nomenclature

PC2-5300

PC2-4200

PC2-3200

CL = 5

667

–

CL = 4

533

400

CL = 3

400

RCD

(ns)

PDF: 09005aef818e3e75/Source: 09005aef818e3df5

htf5c32x72k.fm - Rev. B 2/07 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

MT5HTF3272KY-53E Related Products

	MT5HTF3272KY-53E	MT5HTF3272KY-40E	MT5HTF3272PKY-40E	MT5HTF3272PKY-53E	MT5HTF3272PKY-667
Description	DDR DRAM Module, 32MX72, 0.5ns, CMOS, PDMA244,	DDR DRAM Module, 32MX72, 0.6ns, CMOS, PDMA244,	DDR DRAM Module, 32MX72, 0.6ns, CMOS, PDMA244,	DDR DRAM Module, 32MX72, 0.5ns, CMOS, PDMA244	DDR DRAM Module, 32MX72, 0.45ns, CMOS, PDMA244,
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
package instruction	DIMM, DIMM244,24	DIMM, DIMM244,24	DIMM, DIMM244,24	DIMM, DIMM244,24	DIMM, DIMM244,24
Reach Compliance Code	compliant	compliant	compliant	unknown	compliant
Maximum access time	0.5 ns	0.6 ns	0.6 ns	0.5 ns	0.45 ns
Maximum clock frequency (fCLK)	267 MHz	200 MHz	200 MHz	267 MHz	333 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDMA-N244	R-PDMA-N244	R-PDMA-N244	R-PDMA-N244	R-PDMA-N244
memory density	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit	2415919104 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	72	72	72	72	72
Number of terminals	244	244	244	244	244
word count	33554432 words	33554432 words	33554432 words	33554432 words	33554432 words
character code	32000000	32000000	32000000	32000000	32000000
Maximum operating temperature	55 °C	55 °C	55 °C	55 °C	55 °C
organize	32MX72	32MX72	32MX72	32MX72	32MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM244,24	DIMM244,24	DIMM244,24	DIMM244,24	DIMM244,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
Maximum slew rate	1.625 mA	1.6 mA	1.6 mA	1.625 mA	1.65 mA
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL

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