DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ19
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers
etc.
The transistor features very low
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
P
tot
f
T
C
re
F
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
noise figure
up to T
s
= 145
°C
(note 1)
I
c
= 50 mA; V
CE
= 10 V; f = 500 MHz;
T
j
= 25
°C
I
c
= 10 mA; V
CE
= 10 V; f = 1 MHz;
T
amb
= 25
°C
I
c
= 50 mA; V
CE
= 10 V; Z
s
= opt.;
f = 500 MHz; T
amb
= 25
°C
open base
CONDITIONS
−
−
−
5.5
1.3
3.3
TYP.
PINNING
PIN
1
2
3
DESCRIPTION
Code: FB
emitter
collector
base
1
Bottom view
2
page
BFQ19
3
MBK514
Fig.1 SOT89.
MAX.
15
100
1
−
−
−
UNIT
V
mA
W
GHz
pF
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector tab.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
f
>
1 MHz
up to T
s
= 145
°C
(note 1)
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
−65
−
MIN.
MAX.
20
15
3.3
100
150
1
150
175
UNIT
V
V
V
mA
mA
W
°C
°C
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
THERMAL RESISTANCE
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
PARAMETER
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
CONDITIONS
I
E
= 0; V
CB
= 10 V
I
C
= 70 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 1 MHz;
T
amb
= 25
°C
I
C
= 70 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 50 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
°C
I
C
= 50 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°C
F
Note
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
G
UM
S
21
-
=
10 log
-------------------------------------------------------------
dB.
2
2
1
–
S
11
1
–
S
22
2
BFQ19
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to T
s
= 145
°C
(note 1)
THERMAL RESISTANCE
30 K/W
MIN.
−
25
−
−
−
4.4
−
−
−
TYP.
−
80
1.6
5
1.3
5.5
11.5
7.5
3.3
MAX.
100
−
−
−
−
−
−
−
−
UNIT
nA
pF
pF
pF
GHz
dB
dB
dB
noise figure
I
C
= 50 mA; V
CE
= 10 V; Z
s
= opt.;
f = 500 MHz; T
amb
= 25
°C
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFQ19
MBB774
MBB830
handbook, halfpage
120
handbook, halfpage
5
h FE
Cc
(pF)
4
80
3
2
40
1
0
0
40
80
I C (mA)
120
0
0
5
10
15
V CB (V)
20
V
CE
= 10 V; T
j
= 25
°C.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.2
DC current gain as a function of collector
current.
Fig.3
Collector capacitance as a function of
collector-base voltage.
handbook, halfpage
8
MBB773
fT
(GHz)
6
4
2
0
0
40
80
I C (mA)
120
V
CE
= 10 V; f = 500 MHz; T
j
= 25
°C.
Fig.4
Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BFQ19
SOT89
D
B
A
b3
E
HE
L
1
2
b2
3
c
w
M
b1
e
1
e
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.6
1.4
b1
0.48
0.35
b2
0.53
0.40
b3
1.8
1.4
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
e
3.0
e1
1.5
HE
4.25
3.75
L
min.
0.8
w
0.13
OUTLINE
VERSION
SOT89
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
September 1995
5
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