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SB10150

Description
10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC
CategoryDiscrete semiconductor    diode   
File Size63KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric Compare View All

SB10150 Overview

10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC

SB10150 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationHIGH VOLTAGE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage150 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
WTE
POWER SEMICONDUCTORS
SB10150 – SB10200
Pb
10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
C
G
PIN1
3
B
Dim
Max
A
13.90
15.90
B
9.80
10.70
C
2.54
3.43
D
3.56
4.56
E
12.70
14.73
F
0.51
0.96
G
3.55 Ø
4.09 Ø
H
5.75
6.85
I
4.16
5.00
J
2.03
2.92
K
0.30
0.65
L
1.14
1.40
P
4.83
5.33
All Dimensions in mm
TO-220A
Min
A
D
Mechanical Data
Case: TO-220A, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
P
I
H
L
E
PIN 1 +
+
Case
J
K
PIN 3 -
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
L
= 95°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
θJC
T
j
, T
STG
SB10150
SB10200
Unit
150
105
10
150
0.92
0.5
50
700
2.0
-65 to +150
200
140
V
V
A
A
V
mA
pF
°C/W
°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 10A
@T
A
= 25°C
@T
A
= 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB10150 – SB10200
1 of 4
© 2008 Won-Top Electronics

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