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RSFJLMQG

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size372KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

RSFJLMQG Overview

Rectifier Diode

RSFJLMQG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeRECTIFIER DIODE
JESD-609 codee3
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperature30
RSFAL thru RSFML
Taiwan Semiconductor
CREAT BY ART
Surface Mount Fast Recovery Rectifiers
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- High temperature metallurgically bonded construction
- Fast switching for high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@ 0.5 A
Maximum reverse current @ rated VR T
J
=25
T
J
=125
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
Trr
R
θjC
R
θjA
T
J
T
STG
150
32
150
- 55 to +150
- 55 to +150
SYMBOL
RSF
AL
FAL
50
35
50
RSF
BL
FBL
100
70
100
RSF
DL
FDL
200
140
200
RSF
GL
FGL
400
280
400
0.5
10
1.3
5
50
4
250
500
O
RSF
JL
FJL
600
420
600
RSF
KL
FKL
800
560
800
RSF
ML
FML
1000
700
1000
UNIT
V
V
V
A
A
V
μA
pF
ns
C/W
O
O
C
C
Document Number: DS_D1405033
Version: J14

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