CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 1/6
BTB1184J3
Features
•
Low V
CE
(sat)
•
Excellent current gain characteristics
•
Complementary to BTD1760J3
•
RoHS compliant package
BV
CEO
I
C
R
CESAT
-50V
-3A
130mΩ
Symbol
BTB1184J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-60
-50
-6
-3
-7
1
15
150
-55~+150
Unit
V
V
V
*1
*2
A
W
°C
°C
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
-60
-50
-6
-
-
-
-
120
180
80
-
-
Typ.
-
-
-
-
-
-0.26
-0.96
-
-
-
80
35
Max.
-
-
-
-1
-1
-0.5
-1.2
-
560
-
-
-
Unit
V
V
V
μA
μA
V
V
-
-
-
MHz
pF
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 2/6
Test Conditions
I
C
=-50μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-2A, I
B
=-0.1A
I
C
=-2A, I
B
=-0.1A
V
CE
=-2V, I
C
=-20mA
V
CE
=-3V, I
C
=-500mA
V
CE
=-2V, I
C
=-1A
V
CE
=-5V, I
C
=-0.1A, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
R
180~390
S
270~560
Ordering Information
Device
BTB1184J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
B1184
Recommended soldering footprint
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=3V
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 3/6
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
100
VCESAT@IC=50IB
100
VCE=2V
VCE=1V
10
VCESAT=30IB
VCESAT=20IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
1
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
10000
10000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
On Voltage---VBEON(mV)
Saturation Voltage---(mV)
1000
VBEON@VCE=2V
100
1
10
100
1000
Collector Current---IC(mA)
10000
100
1
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
1.2
Power Dissipation---PD(W)
Power Derating Curve
16
14
Power Dissipation---PD(W)
12
10
8
6
4
2
0
0
20
40
60
80 100 120
Ambient Temperature---TA(℃)
140
160
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
Ambient Temperature---TA(℃)
140
160
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 4/6
Carrier Tape Dimension
BTB1184J3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1184J3
CYStek Product Specification
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