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BTB1184J3_09

Description
Low Vcesat PNP Epitaxial Planar Transistor
File Size205KB,6 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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BTB1184J3_09 Overview

Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2009.02.04
Page No. : 1/6
BTB1184J3
Features
Low V
CE
(sat)
Excellent current gain characteristics
Complementary to BTD1760J3
RoHS compliant package
BV
CEO
I
C
R
CESAT
-50V
-3A
130mΩ
Symbol
BTB1184J3
Outline
TO-252
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-60
-50
-6
-3
-7
1
15
150
-55~+150
Unit
V
V
V
*1
*2
A
W
°C
°C
*2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger.
BTB1184J3
CYStek Product Specification

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Description Low Vcesat PNP Epitaxial Planar Transistor Low Vcesat PNP Epitaxial Planar Transistor
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