CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C606F3
Issued Date :
2005.11.24
Revised Date : 2005.11.30
Page No. : 1/6
BTN3501F3
•
Low V
CE
(sat)
•
High BV
CEO
•
Excellent current gain characteristics
•
Pb-free package
Features
Symbol
BTN3501F3
Outline
TO-263
C
B
E
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
80
80
6
10
20 (Note 1)
2
60
62.5
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
BTN3501F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CEO(SUS)
I
CES
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
*h
FE
f
T
Cob
Min.
80
-
-
-
-
60
40
-
-
Typ.
-
-
-
0.3
1.0
-
-
50
130
Max.
-
10
50
0.6
1.5
-
-
-
-
Unit
V
µA
µA
V
V
-
-
MHz
pF
Spec. No. : C606F3
Issued Date :
2005.11.24
Revised Date : 2005.11.30
Page No. : 2/6
Test Conditions
I
C
=30mA, I
B
=0
V
CE
=80V, V
BE
=0
V
EB
=5V, I
C
=0
I
C
=8A, I
B
=0.4A
I
C
=8A, I
B
=0.8A
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=4A
V
CE
=6V, I
C
=500mA, f=20MHz
V
CB
=10V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Ordering Information
Device
BTN3501F3
Package
TO-263
(Pb-free)
Shipping
800 pcs / Tape & Reel
Marking
N3501
Characteristic Curves
Grounded Emitter Output Characteristics
2500
Collector Current---IC(mA)
Collector Current---IC(mA)
5000
10mA
8mA
4500
4000
3500
3000
2500
2000
1500
1000
500
0
15mA
10mA
5mA
IB=0mA
0
1
2
3
4
5
6
25mA
20mA
Grounded Emitter Output Characteristics
2000
1500
1000
500
0
0
6mA
4mA
2mA
IB=0mA
2
4
Collector To Emitter Voltage---VCE(V)
6
Collector To Emitter Voltage---VCE(V)
BTN3501F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Grounded Emitter Output Characteristics
140
Spec. No. : C606F3
Issued Date :
2005.11.24
Revised Date : 2005.11.30
Page No. : 3/6
Grounded Emitter Output Characteristics
700
2.5mA
Collector Current---IC(mA)
100
80
60
40
20
0
0
1
2
3
4
400uA
300uA
200uA
100uA
IB=0uA
5
6
Collector Current---IC(mA)
120
500uA
600
500
400
300
200
100
IB=0uA
0
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
2mA
1.5mA
1mA
500uA
Collector To Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
VCE = 5V
Saturation Voltage vs Collector Current
10000
V
CE(SAT)
1000
IC = 20IB
IC = 50IB
Current Gain---H
FE
100
VCE = 2V
VCE = 1V
100
IC = 10IB
10
1
10
100
1000
10000
Collector Current---I
C
(mA)
10
1
10
100
1000
10000
Collector Current---I
C
(mA)
Saturation Voltage vs Collector Current
10000
Power Dissipation---P
D
(W)
Saturation Voltage---(mV)
VCE(SAT) @ IC = 10IB
Power Derating Curve
2.5
2
1.5
1
0.5
0
1000
100
1
10
100
1000
10000
Collector Current---I
C
(mA)
0
50
100
150
200
Ambient Temperature---T
A
(℃)
BTN3501F3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Power Derating Curve
70
Power Dissipation---PD(W)
60
50
40
30
20
10
0
Spec. No. : C606F3
Issued Date :
2005.11.24
Revised Date : 2005.11.30
Page No. : 4/6
0
50
100
150
200
Case
Temperature ---TC(℃ )
BTN3501F3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C606F3
Issued Date :
2005.11.24
Revised Date : 2005.11.30
Page No. : 5/6
Carrier Tape Dimension
BTN3501F3
CYStek Product Specification
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