Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-4,
| Parameter Name | Attribute value |
| Maker | Motorola ( NXP ) |
| package instruction | O-MUPM-D1 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| application | GENERAL PURPOSE |
| Shell connection | ANODE |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V |
| JEDEC-95 code | DO-4 |
| JESD-30 code | O-MUPM-D1 |
| Maximum non-repetitive peak forward current | 300 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 1 |
| Maximum operating temperature | 190 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 12 A |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V |
| Maximum reverse current | 500 µA |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| MR1122R | MR1130R | MR1123R | MR1125R | MR1121R | |
|---|---|---|---|---|---|
| Description | Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, DO-4, | Rectifier Diode, 1 Phase, 1 Element, 12A, 1000V V(RRM), Silicon, DO-4, | Rectifier Diode, 1 Phase, 1 Element, 12A, 300V V(RRM), Silicon, DO-4, | Rectifier Diode, 1 Phase, 1 Element, 12A, 500V V(RRM), Silicon, DO-4, | Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-4, |
| Maker | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| package instruction | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ANODE | ANODE | ANODE | ANODE | ANODE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V | 1 V | 1 V | 1 V | 1 V |
| JEDEC-95 code | DO-4 | DO-4 | DO-4 | DO-4 | DO-4 |
| JESD-30 code | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 | O-MUPM-D1 |
| Maximum non-repetitive peak forward current | 300 A | 300 A | 300 A | 300 A | 300 A |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 1 | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 190 °C | 190 °C | 190 °C | 190 °C | 190 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 12 A | 12 A | 12 A | 12 A | 12 A |
| Package body material | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 200 V | 1000 V | 300 V | 500 V | 100 V |
| Maximum reverse current | 500 µA | 500 µA | 500 µA | 500 µA | 500 µA |
| surface mount | NO | NO | NO | NO | NO |
| Terminal form | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG | SOLDER LUG |
| Terminal location | UPPER | UPPER | UPPER | UPPER | UPPER |
京公网安备 11010802033920号
EEWORLD
