BC856ATR datasheet, PDF - EEWORLD Datasheet

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BC856ATR: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size116KB，2 Pages; ManufacturerCentral Semiconductor

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BC856ATR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC856ATR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	4.5 pF
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	125
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.65 V

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BC856 SERIES

BC857 SERIES

BC858 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856,

BC857 and BC858 Series types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for general purpose switching

and amplifier applications.

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS

(TA=25°C)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

Peak Collector Current

ICM

Peak Base Current

IBM

Power Dissipation

Operating and Storage

Junction Temperature

TJ,Tstg

Thermal Resistance

BC858

Note: Reverse Lead Codes Available, Add “R” to

the end of the Part # and Marking Code.

BC857

5.0

100

200

350

-65 to +150

357

BC856

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB= 30V

ICBO

VCB= 30V, TA=150°C

IEBO

VEB=5.0V

BVCBO

IC=10µA (BC858)

BVCBO

IC=10µA (BC857)

BVCBO

IC=10µA (BC856)

BVCEO

IC=10mA (BC858)

BVCEO

IC=10mA (BC857)

BVCEO

IC=10mA (BC856)

BVEBO

IE=10µA

5.0

VCE(SAT)

IC=10mA, IB=0.5mA

VCE(SAT)

IC=100mA, IB=5.0mA

VBE(ON)

IC=2.0mA, VCE=5.0V

0.6

VBE(ON)

IC=10mA, VCE=5.0V

VCE=5.0V, IC=10mA, f=100MHz

100

VCE=5.0V, IC=200µA,

RS=2KΩ, f= 1KHz, BW=200Hz

BC856A

BC857A

BC858A

MIN

MAX

125

250

TYP

MAX

4.0

100

0.3

0.65

0.75

0.82

UNITS

µA

MHz

BC856B

BC857B

BC858B

MIN

MAX

220

475

hFE

VCE=5.0V, IC=2.0mA

BC857C

BC858C

MIN

MAX

420

800

R1 (10-September 2004)

BC856ATR Related Products

	BC856ATR	BC858BBK	BC858BBKLEADFREE	BC858BTRLEADFREE	BC856ATRLEADFREE	BC857BRTR	BC858BTR
Description	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3	Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
package instruction	PLASTIC PACKAGE-3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	PLASTIC PACKAGE-3
Contacts	3	3	3	3	3	3	3
Reach Compliance Code	unknown	not_compliant	compliant	compliant	compliant	compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	65 V	30 V	30 V	30 V	65 V	45 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	125	220	220	220	125	220	220
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e3	e3	e3	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	MATTE TIN (315)	MATTE TIN (315)	Matte Tin (Sn)	TIN LEAD	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
Is it lead-free?	Contains lead	Contains lead	Lead free	Lead free	Lead free	-	Contains lead
Is it Rohs certified?	incompatible	incompatible	conform to	conform to	conform to	-	incompatible
Maker	Central Semiconductor	-	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	-	LOW NOISE
Collector-based maximum capacity	4.5 pF	4.5 pF	4.5 pF	4.5 pF	4.5 pF	-	4.5 pF
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	260	260	260	-	NOT SPECIFIED
Maximum power dissipation(Abs)	0.35 W	0.35 W	-	-	-	0.35 W	0.35 W
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	10	10	10	-	NOT SPECIFIED
VCEsat-Max	0.65 V	0.65 V	0.65 V	0.65 V	0.65 V	-	0.65 V

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