BF904-TAPE-13 datasheet, PDF - EEWORLD Datasheet

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BF904-TAPE-13: DescriptionTRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size227KB，9 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BF904-TAPE-13 Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

BF904-TAPE-13 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	7 V
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.035 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BF904-TAPE-13 Related Products

	BF904-TAPE-13	BF904R-TAPE-13	575R25IE	BF904-TAPE-7
Description	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal	Temperature Compensated Crystal Oscillator	TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
Maker	NXP	NXP	-	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	-	unknown
ECCN code	EAR99	EAR99	-	EAR99
Other features	LOW NOISE	LOW NOISE	-	LOW NOISE
Shell connection	SOURCE	SOURCE	-	SOURCE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	7 V	7 V	-	7 V
Maximum drain current (ID)	0.03 A	0.03 A	-	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.035 pF	0.035 pF	-	0.035 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	-	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	-	R-PDSO-G4
Number of components	1	1	-	1
Number of terminals	4	4	-	4
Operating mode	DUAL GATE, ENHANCEMENT MODE	DUAL GATE, ENHANCEMENT MODE	-	DUAL GATE, ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	-	N-CHANNEL
Certification status	Not Qualified	Not Qualified	-	Not Qualified
surface mount	YES	YES	-	YES
Terminal form	GULL WING	GULL WING	-	GULL WING
Terminal location	DUAL	DUAL	-	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	-	AMPLIFIER
Transistor component materials	SILICON	SILICON	-	SILICON

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