100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Texas Instruments |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 45 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 125 |
| JEDEC-95 code | TO-236AB |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 300 MHz |
| BC860C | BCV71 | BC859C | BCP53 | BCV72 | |
|---|---|---|---|---|---|
| Description | 100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | TRANSISTOR,BJT,NPN,60V V(BR)CEO,100MA I(C),SOT-23 | 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | 1500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR | TRANSISTOR,BJT,NPN,60V V(BR)CEO,100MA I(C),SOT-23 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | , | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | , |
| Reach Compliance Code | unknown | unknown | unknown | unknow | unknow |
| Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 1.5 A | 0.1 A |
| Configuration | SINGLE | Single | SINGLE | SINGLE | Single |
| Minimum DC current gain (hFE) | 125 | 110 | 125 | 40 | 200 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 140 °C | 150 °C |
| Polarity/channel type | PNP | NPN | PNP | PNP | NPN |
| Maximum power dissipation(Abs) | 0.3 W | 0.3 W | 0.3 W | 1.5 W | 0.3 W |
| surface mount | YES | YES | YES | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Collector-emitter maximum voltage | 45 V | - | 30 V | 80 V | - |
| JESD-30 code | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G4 | - |
| Number of components | 1 | - | 1 | 1 | - |
| Number of terminals | 3 | - | 3 | 4 | - |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
| Package shape | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - |
| Package form | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | - |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified | - |
| Terminal form | GULL WING | - | GULL WING | GULL WING | - |
| Terminal location | DUAL | - | DUAL | DUAL | - |
| transistor applications | AMPLIFIER | - | AMPLIFIER | SWITCHING | - |
| Transistor component materials | SILICON | - | SILICON | SILICON | - |
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