BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
Collector
Base
A
Emitter
SOT-23
F
Features
Low power loss, high current capability, low V
F
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
B
E
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
1.50
3.55
0.45
2.60
1.05
0.08
Max
1.70
3.85
0.65
2.80
1.25
0.15
Unit (inch)
Min
0.059
0.140
0.018
0.102
0.041
0.003
Max
0.067
0.152
0.026
0.11
0.049
0.006
0.02 REF
0.50 REF
Ordering Information
Part No.
BC817-16/-25/-40 RF
Package
SOT-23
Packing
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 1)
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
RθJA
T
J
, T
STG
BC817-16
BC817-25
300
50
45
5
500
388
-55 to + 150
BC817-40
Units
mW
V
V
V
mA
°C/W
°C
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-offCurrent
Base-Emitter saturation voltage
Transition frequency
Junction Capacitance
I
C
= 10μA
I
C
= 10mA
I
E
= 1μA
V
CB
= 45V
V
EB
= 4V
I
C
= 500mA
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
I
C
= 0
I
B
= 50mA
I
B
= 50mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
f
T
C
J
h
FE
h
FE
100
>40
BC817-16
BC817-25
50
45
5
0.1
0.1
0.7
1.2
100
10
-
>40
600
>40
BC817-40
Units
V
V
V
μA
μA
V
V
MHz
pF
Collector-Emitter saturation voltage I
C
= 500mA
V
CE
= 5V I
C
= 10mA f= 100MHz
V
R
=0V, f=1.0MHz
V
CE
= 1V
V
CE
= 1V
I
C
= 100mA
I
C
= 100mA
DC current gain
DC current gain
100-250
160-400
250-600
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : C09
BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Pulsed Current Gain vs
Collector Current
10
10
FIG 2 Collector-Emitter Saturation Voltage vs
Collector Current
Ic, Collector Current (A)
1
25 C
o
Ic, Collector Current (mA)
1
0.1
25 C
0.1
o
0.01
V
CE
=5
0.001
0
100
200
300
400
500
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
h
FE
V
CE(sat),
Collector-Emitter Voltage (V)
FIG 3 Base-Emitter Saturation Voltage vs
Collector Current
1000
1
FIG 4 Base-Emitter on Voltage vs
Collector Current
Ic, Collector Current (mA)
25
o
C
100
Ic, Collector Current (A)
0.1
25
o
10
0.01
1
0
0.2
Ambient Temperature (°C)
0.4
0.6
0.8
0.001
1.2
1.4
0
0.2
0.4
1
Reverse Voltage (V)
0.6
0.8
1
1.2
1.4
V
BE(sat),
Base-Emitter Voltage (V)
FIG 5 Collector-Base Capacitance vs
Collector-Base Voltage
V
BE(sat),
Base-Emitter on Voltage (V)
Collector-Base Capactiance (pF)
40
30
20
10
0
0
4
8
12
16
20
24
28
V
CB,
Collector-Base Voltage (V)
Version : C09
Microcontroller MCU
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