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BC817-40RF

Description
500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size71KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BC817-40RF Overview

500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC817-40RF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW POWER LOSS
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC817-16/-25/-40
300mW, NPN Small Signal Transistor
Small Signal Diode
Collector
Base
A
Emitter
SOT-23
F
Features
Low power loss, high current capability, low V
F
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
D
G
B
E
Mechanical Data
Case : SOT- 23 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260°C/10s
Weight : 0.008gram (approximately)
Dimensions
A
B
C
D
E
F
G
Unit (mm)
Min
1.50
3.55
0.45
2.60
1.05
0.08
Max
1.70
3.85
0.65
2.80
1.25
0.15
Unit (inch)
Min
0.059
0.140
0.018
0.102
0.041
0.003
Max
0.067
0.152
0.026
0.11
0.049
0.006
0.02 REF
0.50 REF
Ordering Information
Part No.
BC817-16/-25/-40 RF
Package
SOT-23
Packing
3Kpcs/7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance (Junction to Ambient)
Junction and Storage Temperature Range
(Note 1)
Symbol
P
D
V
CBO
V
CEO
V
EBO
I
C
RθJA
T
J
, T
STG
BC817-16
BC817-25
300
50
45
5
500
388
-55 to + 150
BC817-40
Units
mW
V
V
V
mA
°C/W
°C
Electrical Characteristics
Type Number
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-offCurrent
Base-Emitter saturation voltage
Transition frequency
Junction Capacitance
I
C
= 10μA
I
C
= 10mA
I
E
= 1μA
V
CB
= 45V
V
EB
= 4V
I
C
= 500mA
I
E
= 0
I
B
= 0
I
C
= 0
I
E
= 0
I
C
= 0
I
B
= 50mA
I
B
= 50mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
f
T
C
J
h
FE
h
FE
100
>40
BC817-16
BC817-25
50
45
5
0.1
0.1
0.7
1.2
100
10
-
>40
600
>40
BC817-40
Units
V
V
V
μA
μA
V
V
MHz
pF
Collector-Emitter saturation voltage I
C
= 500mA
V
CE
= 5V I
C
= 10mA f= 100MHz
V
R
=0V, f=1.0MHz
V
CE
= 1V
V
CE
= 1V
I
C
= 100mA
I
C
= 100mA
DC current gain
DC current gain
100-250
160-400
250-600
Notes:1. Valid provided that electrodes are kept at ambient temperature
Version : C09

BC817-40RF Related Products

BC817-40RF BC817-16RF BC817-25 BC817-25RF
Description 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compli compli compli compli
package instruction ROHS COMPLIANT, PLASTIC PACKAGE-3 ROHS COMPLIANT, PLASTIC PACKAGE-3 - ROHS COMPLIANT, PLASTIC PACKAGE-3
ECCN code EAR99 EAR99 - EAR99
Other features LOW POWER LOSS LOW POWER LOSS - LOW POWER LOSS
Maximum collector current (IC) 0.5 A 0.5 A - 0.5 A
Collector-emitter maximum voltage 45 V 45 V - 45 V
Configuration SINGLE SINGLE - SINGLE
Minimum DC current gain (hFE) 250 100 - 160
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3
JESD-609 code e3 e3 - e3
Humidity sensitivity level 1 1 - 1
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 - 260
Polarity/channel type NPN NPN - NPN
surface mount YES YES - YES
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie - Matte Tin (Sn) - with Nickel (Ni) barrie
Terminal form GULL WING GULL WING - GULL WING
Terminal location DUAL DUAL - DUAL
Maximum time at peak reflow temperature 30 30 - 30
Transistor component materials SILICON SILICON - SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz - 100 MHz
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