MBM29DL32XTE/BE
80/90
Data Sheet
(Retired Product)
MBM29DL32XTE/BE
80/90
Cover Sheet
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
MBM29DL32XTE/BE
Revision
DS05-20881-8E
Issue Date
July 20, 2007
Data
Sheet
(R etired
Produ ct)
This page left intentionally blank.
2
MBM29DL32XTE/BE_DS05-20881-8E July 20, 2007
SPANSION
Data Sheet
TM
Flash Memory
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
TM
product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20881-8E
FLASH MEMORY
CMOS
32 M (4 M
×
8/2 M
×
16) BIT Dual Operation
MBM29DL32XTE/BE
80/90
■
DESCRIPTION
The MBM29DL32XTE/BE are a 32 M-bit, 3.0 V-only Flash memory organized as 4 Mbytes of 8 bits each or
2 Mwords of 16 bits each. These devices are designed to be programmed in-system with the standard system
3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The devices can also
be reprogrammed in standard EPROM programmers.
MBM29DL32XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate
memory arrays for operations. It is the Fujitsu’s standard 3 V only Flash memories, with the additional capability
of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either
a program or an erase) operation is simultaneously taking place on the other bank.
(Continued)
MBM29DL32XTE/BE
80
3.3
+0.3
−0.3
■
PRODUCT LINE UP
Part No.
Power Supply Voltage V
CC
(V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
90
3.0
+0.6
−0.3
80
80
30
90
90
35
■
PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
63-ball plastic FBGA
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-63P-M01)
Retired Product DS05-20881-8E_July 20, 2007
MBM29DL32XTE/BE
80/90
(Continued)
In the MBM29DL32XTE/BE, a new design concept is implemented, so called “Sliding Bank Architecture”. Under
this concept, the MBM29DL32XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size
combinations; 4 Mb/28 Mb, 8 Mb/24 Mb, 16 Mb/16 Mb.
To eliminate bus contention the devices have separate chip enable (CE) , write enable (WE) , and output enable
(OE) controls.
The MBM29DL32XTE/BE are pin and command set compatible with JEDEC standard E
2
PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29DL32XTE/BE are erased when shipped from the
factory.
Internally generated and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically inhibits write operations on the loss of power. The end of program or erase is detected
by Data Polling of DQ
7
, by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program
or erase cycle has been completed, the devices internally reset to the read mode.
The MBM29DL32XTE/BE memories electrically erase the entire chip or all bits within a sector simultaneously
via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM
programming mechanism of hot electron injection.
Retired Product DS05-20881-8E_July 20, 2007
5
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