HN62315BP-20 datasheet, PDF - EEWORLD Datasheet

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HN62315BP-20: DescriptionMASK ROM, 512KX8, 200ns, CMOS, PDIP32, PLASTIC, DIP-32; Categorystorage storage; File Size94KB，4 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HN62315BP-20 Overview

MASK ROM, 512KX8, 200ns, CMOS, PDIP32, PLASTIC, DIP-32

HN62315BP-20 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Hitachi （Renesas ）
Parts packaging code	DIP
package instruction	DIP, DIP32,.6
Contacts	32
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	200 ns
JESD-30 code	R-PDIP-T32
JESD-609 code	e0
length	41.9 mm
memory density	4194304 bit
Memory IC Type	MASK ROM
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum standby current	0.00003 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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	HN62315BP-20	HN62315BP-15	HN62315BTT-15	HN62315BF-15	HN62315BTT-20	HN62315BF-20
Description	MASK ROM, 512KX8, 200ns, CMOS, PDIP32, PLASTIC, DIP-32	MASK ROM, 512KX8, 150ns, CMOS, PDIP32, PLASTIC, DIP-32	MASK ROM, 512KX8, 150ns, CMOS, PDSO32, PLASTIC, TSOP2-32	MASK ROM, 512KX8, 150ns, CMOS, PDSO32, PLASTIC, SOP-32	MASK ROM, 512KX8, 200ns, CMOS, PDSO32, PLASTIC, TSOP2-32	MASK ROM, 512KX8, 200ns, CMOS, PDSO32, PLASTIC, SOP-32
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	DIP	TSOP2	SOIC	TSOP2	SOIC
package instruction	DIP, DIP32,.6	DIP, DIP32,.6	TSOP2, TSOP32,.46	SOP, SOP32,.56	TSOP2, TSOP32,.46	SOP, SOP32,.56
Contacts	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	200 ns	150 ns	150 ns	150 ns	200 ns	200 ns
JESD-30 code	R-PDIP-T32	R-PDIP-T32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
JESD-609 code	e0	e0	e0	e0	e0	e0
length	41.9 mm	41.9 mm	20.95 mm	20.45 mm	20.95 mm	20.45 mm
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM	MASK ROM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	TSOP2	SOP	TSOP2	SOP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	TSOP32,.46	SOP32,.56	TSOP32,.46	SOP32,.56
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.08 mm	5.08 mm	1.2 mm	3.05 mm	1.2 mm	3.05 mm
Maximum standby current	0.00003 A	0.00003 A	0.00003 A	0.00003 A	0.00003 A	0.00003 A
Maximum slew rate	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maker	Hitachi （Renesas ）	-	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
width	15.24 mm	15.24 mm	10.16 mm	-	10.16 mm	-

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