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TSB1132_1

Description
Low Vcesat PNP Transistor
File Size193KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSB1132_1 Overview

Low Vcesat PNP Transistor

TSB1132
Low Vcesat PNP Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-40V
-32V
-1A
-0.15V @ I
C
/ I
B
= -0.5A / -50mA
Features
Low V
CE(SAT)
-0.15 @ I
C
/ I
B
= --.5A / -50mA (Typ.)
Excellent DC current gain characteristics
Ordering Information
Part No.
TSB1132CY RM
Package
SOT-89
Packing
1Kpcs / 7” Reel
Structure
Epitaxial Planar Type
PNP Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board.
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
-40
-32
-5
-1
-2.5 (note1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
h
FE
values are classified as follows:
Rank
Q
R
h
FE
120~270
180~390
Conditions
I
C
= -50uA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -4V, I
C
= 0
I
C
/ I
B
= -0.5A / -50mA
V
CE
= -3V, I
C
= 100mA
V
CE
=-5V, I
C
=-50mA,
f=100MHz
V
CB
= -10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
-40
-32
-5
--
--
--
82
--
--
Typ
--
--
--
--
--
-0.15
--
150
20
Max
--
--
--
-0.5
-0.5
-0.5
390
--
30
Unit
V
V
V
uA
uA
V
MHz
pF
1/1
Version: A08

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