TSB1132
Low Vcesat PNP Transistor
SOT-89
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
-40V
-32V
-1A
-0.15V @ I
C
/ I
B
= -0.5A / -50mA
Features
●
●
Low V
CE(SAT)
-0.15 @ I
C
/ I
B
= --.5A / -50mA (Typ.)
Excellent DC current gain characteristics
Ordering Information
Part No.
TSB1132CY RM
Package
SOT-89
Packing
1Kpcs / 7” Reel
Structure
●
●
Epitaxial Planar Type
PNP Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
2. When mounted on a 40 x 40 x 0.7mm ceramic board.
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Limit
-40
-32
-5
-1
-2.5 (note1)
0.6
2 (note 2)
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
h
FE
values are classified as follows:
Rank
Q
R
h
FE
120~270
180~390
Conditions
I
C
= -50uA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50uA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -4V, I
C
= 0
I
C
/ I
B
= -0.5A / -50mA
V
CE
= -3V, I
C
= 100mA
V
CE
=-5V, I
C
=-50mA,
f=100MHz
V
CB
= -10V, f=1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
f
T
Cob
Min
-40
-32
-5
--
--
--
82
--
--
Typ
--
--
--
--
--
-0.15
--
150
20
Max
--
--
--
-0.5
-0.5
-0.5
390
--
30
Unit
V
V
V
uA
uA
V
MHz
pF
1/1
Version: A08
TSB1132
Low Vcesat PNP Transistor
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. V
CE(SAT)
v.s. Ic
Figure 3. V
BE(SAT)
v.s. Ic
Figure 4. Power Derating Curve
2/2
Version: A08
TSB1132
Low Vcesat PNP Transistor
SOT-89 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
I
J
SOT-89 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.40
4.60
0.173
0.181
1.50
1.7
0.059
0.070
2.30
2.60
0.090
0.102
0.40
0.52
0.016
0.020
1.50
1.50
0.059
0.059
3.00
3.00
0.118
0.118
0.89
1.20
0.035
0.047
4.05
4.25
0.159
0.167
1.4
1.6
0.055
0.068
0.35
0.44
0.014
0.017
3/3
Version: A08
TSB1132
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A08
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