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TSC5904CXRF

Description
Low Vcesat NPN Transistor
CategoryDiscrete semiconductor    The transistor   
File Size311KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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TSC5904CXRF Overview

Low Vcesat NPN Transistor

TSC5904CXRF Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
TSC5904
Low Vcesat NPN Transistor
SOT-23
Pin Definition:
1. Base
2. Emitter
3. Collector
PRODUCT SUMMARY
BV
CBO
BV
CEO
I
C
V
CE(SAT)
80V
60V
3A
0.60V @ I
C
/ I
B
= 3 / 300mA
Features
High Collector-Emitter BV
CEO
=60V
High Collector Current I
C
=3A
Ordering Information
Part No.
TSC5904CX RF
Package
SOT-23
Packing
3Kpcs / 7” Reel
Structure
Epitaxial Planar Type
NPN Silicon Transistor
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
J
T
STG
Limit
80
60
5
3
500
+150
- 55 to +150
Unit
V
V
V
A
mW
o
C
o
C
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Conditions
I
C
= 10uA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10uA, I
C
= 0
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
I
C
= 1A, I
B
= 100mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 50mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 500mA
V
CE
= 5V, I
C
=-100mA
V
CB
= 10V, f=1MHz
VCC= 10V, IC= 500mA,
I
B1
=-I
B2
=50mA
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
1
V
CE(SAT)
2
V
BE(SAT)
V
BE(ON)
h
FE
1
h
FE
2
h
FE
3
h
FE
4
f
T
Cob
Ton
Toff
Min
80
60
5
--
--
--
--
--
70
100
80
40
140
--
--
--
Typ
--
--
--
--
--
0.12
0.43
0.9
0.8
--
--
--
--
--
45
800
Max
--
--
--
0.1
0.1
0.3
0.6
1.25
1.0
--
300
--
--
--
30
--
--
Unit
V
V
V
uA
uA
V
V
V
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
MHz
pF
nS
nS
1/4
Version: A08

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