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IXTT40N50L2-TRL

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size191KB,5 Pages
ManufacturerIXYS
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IXTT40N50L2-TRL Overview

Power Field-Effect Transistor,

IXTT40N50L2-TRL Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
LinearL2
TM
Power MOSFET
w/Extended FBSOA
N-Channel Enhancement Mode
Avalanche rated
IXTT40N50L2
IXTQ40N50L2
IXTH40N50L2
V
DSS
I
D25
R
DS(on)
= 500V
= 40A
170m
TO-268 (IXTT)
G
S
D (Tab)
TO-3P (IXTQ)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
T
C
= 25C
Maximum Ratings
500
500
20
30
40
80
40
2
540
-55 to +150
+150
-55 to +150
V
V
V
V
A
A
A
J
W
C
C
C
°C
°C
Nm/lb.in
g
g
g
Features
G
D
S
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247&TO-3P)
TO-268
TO-3P
TO-247
300
260
1.13/10
4.0
5.5
6.0
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 250A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
500
2.5
4.5
100
50
300
V
V
nA
A
A
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Guaranteed FBSOA at 75C
Applications
170 m
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
© 2017 IXYS CORPORATION, All rights reserved
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