LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
PNP Duals
•
We declare that the material of product compliance with RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC807-16DMT1G
LBC807-25DMT1G
LBC807-40DMT
S-LBC807-16DMT1G
S-LBC807-25DMT1G
S-LBC807-40
DMT1G
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
SC-74
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
370
3.0
333
600
4.8
R
θJA
T
J
, T
stg
208
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
6
5
4
Q
1
Q
2
R
θJA
P
D
1
2
3
DEVICE MARKING
LBC807–16 DMT1G = 5A; LBC807–25DMT1G = 5B; LBC807–40DMT1G = 5C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I
C
= –10
µA)
Emitter–Base Breakdown Voltage
(I
E
= –1.0
µA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
V
(BR)CEO
45
—
—
V
V
(BR)CES
50
—
—
V
5.0
—
—
V
I
CBO
—
—
—
—
100
5.0
nA
µA
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBC807-16DMT1G
LBC807-25 DMT1G LBC807-40DMT1G
S-LBC807-16DMT1G S-LBC807-25 DMT1G S-LBC807-40DMT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
h
FE
LBC807–16
LBC807–25
LBC807–40
100
160
250
40
V
CE(sat)
—
—
—
—
—
—
250
400
600
—
0.7
V
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector–Emitter Saturation Voltage
(I
C
= 500 mA, I
B
= 50 mA)
Base–Emitter On Voltage
( I
C
= 500 mA, V
CE
= 1.0 V)
V
BE(on)
—
—
1.2
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
( I
C
= 10 mA, V
CE
= 5.0 V
dc
, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
f
T
C
obo
100
—
—
10
—
—
MHz
pF
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBC807-16DMT1G
LBC807-25 DMT1G LBC807-40DMT1G
S-LBC807-16DMT1G S-LBC807-25 DMT1G S-LBC807-40DMT1G
SC−74
D
6
5
1
2
4
H
E
E
3
b
e
q
0.05 (0.002)
A1
A
L
C
DIM
A
A1
b
c
D
E
e
L
H
E
q
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
2.4
0.094
1.9
0.074
0.7
0.028
0.95
0.037
0.95
0.037
1.0
0.039
SCALE 10:1
mm
inches
Rev.O 3/3
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