2SJ414 datasheet, PDF - EEWORLD Datasheet

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2SJ414: DescriptionPower Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size158KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SJ414 Overview

Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 2 PIN

2SJ414 Parametric

Parameter Name	Attribute value
Objectid	1449020004
package instruction	SMALL OUTLINE, R-PSSO-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
YTEOL	0
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.11 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	72 A
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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Ordering number : EN5367

2SJ414

SANYO Semiconductors

DATA SHEET

2SJ414

Features

•

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Low ON-state resistance.

Low-voltage drive.

Surface mount type device making the following possible.

•

Reduction in the number of manufacturing processes for 2SJ414-applied equipment.

•

High density surface mount applications.

•

Small size of 2SJ414-applied equipment.

Speciﬁcations

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10μs, duty cycle≤1%

Tc=25°C

Conditions

Ratings

--60

±20

--18

--72

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Gate-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Symbol

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(off)

Conditions

-1mA,

VGS=0V

ID=-

IG=±100μA, VDS=0V

VDS=--60V, VGS=0V

VGS=±16V, VDS=0V

-10V,

ID=-

-1mA

VDS=-

--1.0

Ratings

min

--60

±20

--100

±10

-2.0

typ

max

Unit

μA

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer' s

products or equipment.

www.semiconductor-sanyo.com/network

22410QA TK IM TA-0184 No. 5367-1/3

2SJ414

Note on usage : Since the 2SJ414 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

Co.,Ltd. products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures

or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give

rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but

are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

structural design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or

otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be

granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any

third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third

party's intellectual property rights which has resulted from the use of the technical information and products

mentioned above.

This catalog provides information as of February, 2010. Speciﬁcations and information herein are subject

to change without notice.

PS No. 5367-3/3

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