commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
I
D
(A)
-9.5
Product Summary
BV
DSS
(V)
-20
R
DS(ON)
(mΩ)
20
Pin Assignments
S
S
S
G
1
2
3
4
8
7
6
5
Pin Descriptions
D
D
D
D
Pin Name
S
G
D
Description
Source
Gate
Drain
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
4409P X X X
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.2 Aug 25, 2005
1/6
AF4409P
P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
-20
±8
-9.5
-7.6
-76
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Resistance Ratings
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
50
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain-Source
On-Resistance
(Note 3)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
(T
J
=25
o
C)
Drain-Source Leakage Current
(T
J
=70
o
C)
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=-250uA
Reference to 25
o
C,
I
D
=-1mA
V
GS
=-4.5V, I
D
=-9.5A
V
GS
=-2.5V, I
D
=-6.0A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9.5A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=±8V
I
D
=-9.5A,
V
DS
=-10V,
V
GS
=-5V
V
DS
=-10V,
I
D
=-9.5A,
R
G
=6Ω, V
GS
=-4.5V
R
D
=1.05Ω
V
GS
=0V,
V
DS
=-15V,
f=1.0MHz
Min.
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.037
-
-
-
28
-
-
-
30
6
3.5
26
500
70
300
2158
845
230
Max.
-
-
20
35
-1
-
-1
uA
-25
±100
-
-
-
-
-
-
-
-
-
-
nA
nC
Units
V
V/ C
mΩ
V
S
o
ns
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Test Conditions
Continuous Source Current (Body
V
D
=V
G
=0V, V
S
=-1.2V
Diode)
T
J
=25
o
C, I
S
=-2.5A,
Forward On Voltage
(Note 3)
V
GS
=0V
2
o
Min.
-
-
Typ.
-
-
Max.
-2.08
-1.2
Unit
A
V
Note 1:
Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad.
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