ZXTP2006E6
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6
SUMMARY
BV
CEO
= -20V : R
SAT
= 31m ; I
C
= -3.5A
DESCRIPTION
Packaged in the SOT23-6 outline this new low
saturation 20V PNP transistor offers extremely low on
state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
FEATURES
•
3.5 Amps continuous current
•
Extremely low saturation voltage (-70mV max @ 1A/100mA )
•
Up to 10 Amps peak current
•
Very low saturation voltages
SOT23-6
APPLICATIONS
•
DC - DC converters
•
Battery charging
•
Power switches
•
Motor control
•
Power management functions
ORDERING INFORMATION
DEVICE
REEL
SIZE
7”
13”
TAPE WIDTH
8mm embossed
8mm embossed
QUANTITY PER REEL
3,000
10,000
PINOUT
ZXTP2006E6TA
ZXTP2006E6TC
DEVICE MARKING
52
TOP VIEW
ISSUE 1 - JUNE 2005
1
ZXTP2006E6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
LIMIT
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
-25
-20
-7.5
-3.5
-10
1.1
8.8
P
D
1.7
13.6
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JC
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) As above measured at t<5 seconds.
ISSUE 1 - JUNE 2005
2
ZXTP2006E6
CHARACTERISTICS
ISSUE 1 - JUNE 2005
3
ZXTP2006E6
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(SAT)
-10
-100
-110
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
h
FE
300
300
150
10
Transition frequency
f
T
C
OBO
-0.96
-0.8
575
450
285
40
110
900
MIN.
-25
-20
-7.5
TYP.
-49
-43
-8.4
-100
-100
-100
-15
-140
-130
-1.1
-0.9
MAX. UNIT CONDITIONS
V
V
V
nA
nA
nA
mV
mV
mV
V
V
I
C
= -100 A
I
C
= -10mA *
I
E
= -100 A
V
CB
= -20V
V
CB
= -20V
V
EB
= -6V
I
C
= -0.1A, I
B
= -10mA*
I
C
= -1A, I
B
= -10mA*
I
C
= -3.5A, I
B
= -350mA*
I
C
= -3.5A, I
B
= -350mA*
I
C
= -3.5A, V
CE
= -2V *
I
C
= -10mA, V
CE
= -2V *
I
C
= -1A, V
CE
= -2V *
I
C
= -3.5A, V
CE
= -2V *
I
C
= -10A, V
CE
= -2V *
I
C
= -50mA, V
CE
= -10V
f = 50MHz
pF
V
CB
= -10V, f = 1MHz *
Output capacitance
45
NOTES
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ISSUE 1 - JUNE 2005
4
ZXTP2006E6
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2005
5
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