ZXT13N15DE6
SuperSOT4™
15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=15V; R
SAT
= 29m ; I
C
= 5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 15A
I
C
=5A Continuous Collector Current
SOT23-6 package
SOT23-6
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
ORDERING INFORMATION
DEVICE
ZXT13N15DE6TA
ZXT13N15DE6TC
DEVICE MARKING
N15D
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
C
C
B
Top View
C
C
E
10000 units
ISSUE 1 - DECEMBER 1999
1
ZXT13N15DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)
Linear Derating Factor
Power Dissipation at TA=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
40
15
7.5
15
5
500
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
°C
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - DECEMBER 1999
2
ZXT13N15DE6
TYPICAL CHARACTERISTICS
1.2
I
C
Collector Current (A)
10
Max Power Dissipation (W)
1.0
0.8
0.6
0.4
0.2
0.0
DC
1
1s
100ms
10ms
1ms
100µs
Single Pulse Tamb=25°C
100m
10m
100m
1
10
0
20
40
60
80
100
120
140
160
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
120
Thermal Resistance (°C/W)
100
80
60
40
20
D=0.1
D=0.5
Single Pulse
D=0.2
D=0.05
0
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - DECEMBER 1999
3
ZXT13N15DE6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
5.0
45
130
145
MIN.
40
15
7.5
TYP.
85
22
8.5
100
100
100
8
70
190
200
1.0
0.9
250
300
200
20
400
450
300
50
72
76
92
340
900
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=32V
V
EB
=6V
V
CES
=32V
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=4A, I
B
=40mA*
I
C
=5A, I
B
=100mA*
I
C
=5A, I
B
=100mA*
I
C
=5A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=15A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=50MHz
V
CB
=10V, f=1MHz
V
CC
=10V, I
C
=3A
I
B1
=I
B2
=60mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - DECEMBER 1999
4
ZXT13N15DE6
TYPICAL CHARACTERISTICS
0.25
T
amb
=25°C
I
C
/I
B
=50
100m
0.20
I
C
/I
B
=100
100°C
V
CE(SAT)
(V)
V
CE(SAT)
(V)
0.15
0.10
0.05
25°C
10m
I
C
/I
B
=50
1m
I
C
/I
B
=10
-55°C
1m
10m
100m
1
I
C
Collector Current (A)
10
0.00
1m
10m
100m
1
10
V
CE(SAT)
v I
C
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.2
V
CE
=2V
100°C
1.0
I
C
/I
B
=50
Normalised Gain
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
-55°C
V
BE(SAT)
(V)
0.8
25°C
0.6
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
V
CE
=2V
V
BE(ON)
(V)
0.8
-55°C
0.6
25°C
100°C
0.4
1m
10m
100m
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ISSUE 1 - DECEMBER 1999
5
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