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ADP3602-01

Description
Mixer Diode, Low Barrier, KA Band, 2000ohm Z(V) Max, Silicon,
CategoryDiscrete semiconductor    diode   
File Size114KB,3 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

ADP3602-01 Overview

Mixer Diode, Low Barrier, KA Band, 2000ohm Z(V) Max, Silicon,

ADP3602-01 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandKA BAND
maximum impedance2000 Ω
minimum impedance1000 Ω
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Pulse input maximum power0.1 W
Certification statusNot Qualified
surface mountNO
Minimum tangent signal sensitivity-49 dBm
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Schottky barrier typeLOW BARRIER
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