240pin DDR3 SDRAM Registered DIMM
DDR3 SDRAM Registered DIMM
Based on 1Gb T-die
HMT112R7TFR8C
HMT125R7TFR8C
HMT125R7TFR4C
HMT151R7TFR8C
HMT151R7TFR4C
*Hynix Semiconductor reserves the right to change products or specifications without notice
Rev. 0.1 / Dec. 2009
1
Revision History
Revision No.
0.1
History
Initial Release
Draft Date
Dec. 2009
Remark
Preliminary
Rev. 0.1 / Dec. 2009
2
Description
Hynix Registered DDR3 SDRAM DIMMs (Registered Double Data Rate Synchronous DRAM Dual In-Line
Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM
devices. These Registered SDRAM DIMMs are intended for use as main memory when installed in systems
such as servers and workstations.
Features
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Power Supply: VDD=1.5V (1.425V to 1.575V)
VDDQ = 1.5V (1.425V to 1.575V)
Backward Compatible with 1.5V DDR3 Memory Module
VDDSPD=3.0V to 3.6V
Functionality and operations comply with the DDR3L SDRAM datasheet
8 internal banks
Data transfer rates: PC3L-10600, PC3L-8500
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number
HMT112R7TFR8C-G7/H9
HMT125R7TFR8C-G7/H9
HMT125R7TFR4C-G7/H9
HMT151R7TFR4C-G7/H9
HMT151R7TFR8C-G7
Density
1GB
2GB
2GB
4GB
4GB
Organization
128Mx72
256Mx72
256Mx72
512Mx72
512Mx72
Component Composition
128Mx8(H5TQ1G83TFR)*9
128Mx8(H5TQ1G83TFR)*18
256Mx4(H5TQ1G43TFR)*18
256Mx4(H5TQ1G43TFR)*36
128Mx8(H5TQ1G83TFR)*36
# of
ranks
1
2
2
2
4
FDHS
X
X
X
O
O
* In order to uninstall FDHS, please contact sales administrator
Rev. 0.1 / Dec. 2009
3
Key Parameters
MT/s
DDR3-1066
DDR3-1333
Grade
-G7
-H9
tCK
(ns)
1.875
1.5
CAS
Latency
(tCK)
7
9
tRCD
(ns)
13.125
13.5
tRP
(ns)
13.125
13.5
tRAS
(ns)
37.5
36
tRC
(ns)
50.625
49.5
CL-tRCD-tRP
7-7-7
9-9-9
Speed Grade
Frequency [MHz]
Grade
CL6
-G7
-H9
800
800
CL7
1066
1066
CL8
1066
1066
1333
1333
CL9
CL10
Remark
Address Table
1GB(1Rx8)
Refresh
Method
Row Address
Column
Address
Bank Address
Page Size
8K/64ms
A0-A13
A0-A9
BA0-BA2
1KB
2GB(2Rx8)
8K/64ms
A0-A13
A0-A9
BA0-BA2
1KB
2GB(1Rx4)
8K/64ms
A0-A13
A0-A9, A11
BA0-BA2
1KB
4GB(2Rx4)
8K/64ms
A0-A13
A0-A9,A11
BA0-BA2
1KB
4GB(4Rx8)
8K/64ms
A0-A13
A0-A9
BA0-BA2
1KB
Rev. 0.1 / Dec. 2009
4
Pin Descriptions
Pin Name
CK0
CK0
CK1
CK1
CKE[1:0]
RAS
Description
Clock Input, positive line
Clock Input, negative line
Clock Input, positive line
Clock Input, negative line
Clock Enables
Row Address Strobe
Num
ber
1
1
1
1
2
1
Pin Name
ODT[1:0]
DQ[63:0]
CB[7:0]
DQS[8:0]
DQS[8:0]
DM[8:0]/
DQS[17:9],
TDQS[17:9]
DQS[17:9],
TDQS[17:9]
EVENT
TEST
RESET
V
DD
V
SS
V
REFDQ
V
REFCA
V
TT
V
DDSPD
Description
On Die Termination Inputs
Data Input/Output
Data check bits Input/Output
Data strobes
Data strobes, negative line
Data Masks / Data strobes,
Termination data strobes
Data strobes, negative line,
Termination data strobes
Reserved for optional hardware
temperature sensing
Memory bus test tool (Not Con-
nected and Not Usable on DIMMs)
Register and SDRAM control pin
Power Supply
Ground
Reference Voltage for DQ
Reference Voltage for CA
Termination Voltage
SPD Power
Num
ber
2
64
8
9
9
9
CAS
WE
S[3:0]
A[9:0],A11,
A[15:13]
A10/AP
A12/BC
BA[2:0]
SCL
SDA
SA[2:0]
Par_In
Err_Out
Column Address Strobe
Write Enable
Chip Selects
Address Inputs
Address Input/Autoprecharge
Address Input/Burst chop
SDRAM Bank Addresses
Serial Presence Detect (SPD)
Clock Input
SPD Data Input/Output
SPD Address Inputs
Parity bit for the Address and
Control bus
Parity error found on the
Address and Control bus
1
1
4
14
1
1
3
1
1
3
1
1
9
1
1
1
22
59
1
1
4
1
Rev. 0.1 / Dec. 2009
5
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