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CMH02(TE12L,Q)

Description
DIODE HI EFF 400V 3A M-FLAT
CategoryDiscrete semiconductor    diode   
File Size197KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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CMH02(TE12L,Q) Overview

DIODE HI EFF 400V 3A M-FLAT

CMH02(TE12L,Q) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
CMH02
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH02
Switching Mode Power Supply Applications
Repetitive peak reverse voltage: V
RRM
= 400 V
Average forward current: I
F (AV)
= 3.0 A
Low forward voltage: V
FM
=1.3 V (Max.)
Very fast reverse recovery time: trr =50ns (Max.)
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
400
3.0 (Note 1)
40 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Tℓ=87°C
Device mounted on a ceramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×2
mm
board thickness:0.64t
JEDEC
JEITA
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.023 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
I
RRM
t
rr
t
fr
Test Condition
I
FM
=
0.1 A (pulse test)
I
FM
=
1.0 A (pulse test)
I
FM
=
3.0 A (pulse test)
V
RRM
=
400 V (pulse test)
I
F
=
1 A, di/dt =
−30
A/μs
I
F
=
1.0 A
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.73
0.93
1.1
Max
1.3
10
50
100
60
μA
ns
ns
V
Unit
135
°C/W
210
16
°C/W
Start of commercial production
2002-12
1
2013-11-01
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