Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-based maximum capacity | 12 pF |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 180 |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.35 W |
| Certification status | Not Qualified |
| Guideline | CECC50002-233 |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| Maximum off time (toff) | 400 ns |
| Maximum opening time (tons) | 100 ns |
| VCEsat-Max | 0.7 V |
| BCW65C | BCW65B | FMMT491A | BCW67C | FMMT491 | BCX41 | FMMT489 | FMMT494 | BCW68F | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon, | Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN |
| Is it Rohs certified? | incompatible | incompatible | conform to | incompatible | conform to | conform to | conform to | conform to | incompatible |
| Reach Compliance Code | unknown | unknown | compliant | unknown | compliant | unknown | compliant | compliant | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.8 A | 0.8 A | 1 A | 0.8 A | 1 A | 0.8 A | 1 A | 1 A | 0.8 A |
| Collector-emitter maximum voltage | 32 V | 32 V | 40 V | 32 V | 60 V | 125 V | 30 V | 120 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 180 | 110 | 35 | 180 | 100 | 25 | 20 | 20 | 35 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e0 | e0 | e3 | e0 | e3 | e3 | e3 | e3 | e0 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | NPN | NPN | NPN | PNP | NPN | NPN | NPN | NPN | PNP |
| Maximum power dissipation(Abs) | 0.35 W | 0.35 W | 0.5 W | 0.225 W | 0.5 W | 0.35 W | 0.5 W | 0.5 W | 0.225 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 100 MHz | 150 MHz | 100 MHz | 150 MHz | 100 MHz | 150 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.7 V | 0.7 V | 0.5 V | 0.3 V | 0.5 V | 0.9 V | 0.6 V | 0.3 V | 0.3 V |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | - | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Collector-based maximum capacity | 12 pF | 12 pF | 10 pF | 18 pF | 10 pF | - | 10 pF | 10 pF | 18 pF |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING |
| Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
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