BCW68F datasheet, PDF - EEWORLD Datasheet

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BCW68F: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size52KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BCW68F Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCW68F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-based maximum capacity	18 pF
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
Guideline	CECC50002-234
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Maximum off time (toff)	400 ns
Maximum opening time (tons)	100 ns
VCEsat-Max	0.3 V
Base Number Matches	1

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BCW68F Related Products

	BCW68F	BCW65B	FMMT491A	BCW67C	FMMT491	BCX41	FMMT489	FMMT494	BCW65C
Description	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.8A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Is it Rohs certified?	incompatible	incompatible	conform to	incompatible	conform to	conform to	conform to	conform to	incompatible
Reach Compliance Code	unknown	unknown	compliant	unknown	compliant	unknown	compliant	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.8 A	0.8 A	1 A	0.8 A	1 A	0.8 A	1 A	1 A	0.8 A
Collector-emitter maximum voltage	45 V	32 V	40 V	32 V	60 V	125 V	30 V	120 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	35	110	35	180	100	25	20	20	180
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0	e3	e0	e3	e3	e3	e3	e0
Humidity sensitivity level	1	1	1	1	1	1	1	1	1
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	NPN	NPN	PNP	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.225 W	0.35 W	0.5 W	0.225 W	0.5 W	0.35 W	0.5 W	0.5 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	150 MHz	100 MHz	150 MHz	100 MHz	150 MHz	100 MHz	100 MHz
VCEsat-Max	0.3 V	0.7 V	0.5 V	0.3 V	0.5 V	0.9 V	0.6 V	0.3 V	0.7 V
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	-	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Collector-based maximum capacity	18 pF	12 pF	10 pF	18 pF	10 pF	-	10 pF	10 pF	12 pF
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Base Number Matches	1	1	1	1	1	1	1	1	-

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