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BR3501(W)

Description
Bridge Rectifier Diode, 35A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size70KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

BR3501(W) Overview

Bridge Rectifier Diode, 35A, 100V V(RRM),

BR3501(W) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Microelectronics
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current400 A
Number of components4
Maximum operating temperature125 °C
Maximum output current35 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
BL
FEATURES
GALAXY ELECTRICAL
BR35005(W)- -
-
BR3510(W)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 35.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to
400
Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 8 screw
mounting
BR
-
W
METAL HEAT SINK
.452
(11.5)
MAX
.042(1.1)
.090(2.0)
PLASTIC
.480(12.2)
.425(10.8)
1.181(30.0)
1.102(28.0)
HOLE FOR
NO.8 SCREW
AC
.732(18.6)
.692(17.6)
-
+
.468(11.9)
.429(10.9)
AC
1.181(30.0)
1.102(28.0)
.732(18.6)
.692(17.6)
.033x 250
(0.8x 6.4)
inch (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BR
35005
(W)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
A
=50
BR
3501
(W)
100
70
100
BR
3502
(W)
200
140
200
BR
3504
(W)
400
280
400
35.0
BR
3506
(W)
600
420
600
BR
3508
(W)
800
560
800
BR
3510
(W)
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 17.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
400.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287052
BL
GALAXY ELECTRICAL
1.

BR3501(W) Related Products

BR3501(W) BR3504(W) BR3506(W) BR3508(W) BR3502(W)
Description Bridge Rectifier Diode, 35A, 100V V(RRM), Bridge Rectifier Diode, 35A, 400V V(RRM), Bridge Rectifier Diode, 35A, 600V V(RRM), Bridge Rectifier Diode, 35A, 800V V(RRM), Bridge Rectifier Diode, 35A, 200V V(RRM),
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics Galaxy Microelectronics
Reach Compliance Code unknown unknown unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A 400 A
Number of components 4 4 4 4 4
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Maximum output current 35 A 35 A 35 A 35 A 35 A
Maximum repetitive peak reverse voltage 100 V 400 V 600 V 800 V 200 V
surface mount NO NO NO NO NO
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