BR3502(W) datasheet, PDF - EEWORLD Datasheet

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BR3502(W): DescriptionBridge Rectifier Diode, 35A, 200V V(RRM),; CategoryDiscrete semiconductor diode; File Size70KB，2 Pages; ManufacturerGalaxy Microelectronics; Environmental Compliance

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BR3502(W) Overview

Bridge Rectifier Diode, 35A, 200V V(RRM),

BR3502(W) Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Galaxy Microelectronics
Reach Compliance Code	unknown
Configuration	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	400 A
Number of components	4
Maximum operating temperature	125 °C
Maximum output current	35 A
Maximum repetitive peak reverse voltage	200 V
surface mount	NO

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FEATURES

GALAXY ELECTRICAL

BR35005(W)- -

BR3510(W)

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 35.0 A

SILICON BRIDGE RECTIFIERS

Rating to 1000V PRV

Surge overload rating to

400

Amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Lead solderable per MIL-STD-202 method 208

Mounting: thru hole for # 8 screw

mounting

METAL HEAT SINK

.452

(11.5)

MAX

.042(1.1)

.090(2.0)

PLASTIC

.480(12.2)

.425(10.8)

1.181(30.0)

1.102(28.0)

HOLE FOR

NO.8 SCREW

.732(18.6)

.692(17.6)

.468(11.9)

.429(10.9)

1.181(30.0)

1.102(28.0)

.732(18.6)

.692(17.6)

.033x 250

(0.8x 6.4)

inch (mm)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

35005

(W)

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard

output current

=50

3501

(W)

100

3502

(W)

200

140

200

3504

(W)

400

280

400

35.0

3506

(W)

600

420

600

3508

(W)

800

560

800

3510

(W)

1000

700

1000

UNITS

RRM

RMS

F(AV)

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

@ 17.5 A

Maximum reverse current

at rated DC blocking voltage

=25

=100

FSM

400.0

STG

1.1

10.0

1.0

- 55 ---- + 125

- 55 ---- + 150

μA

Operating junction temperature range

Storage temperature range

www.galaxycn.com

Document Number 0287052

GALAXY ELECTRICAL

BR3502(W) Related Products

	BR3502(W)	BR3504(W)	BR3506(W)	BR3508(W)	BR3501(W)
Description	Bridge Rectifier Diode, 35A, 200V V(RRM),	Bridge Rectifier Diode, 35A, 400V V(RRM),	Bridge Rectifier Diode, 35A, 600V V(RRM),	Bridge Rectifier Diode, 35A, 800V V(RRM),	Bridge Rectifier Diode, 35A, 100V V(RRM),
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maximum non-repetitive peak forward current	400 A	400 A	400 A	400 A	400 A
Number of components	4	4	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C
Maximum output current	35 A	35 A	35 A	35 A	35 A
Maximum repetitive peak reverse voltage	200 V	400 V	600 V	800 V	100 V
surface mount	NO	NO	NO	NO	NO

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