ZXMP6A13F
60V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= -60V; R
DS(ON)
= 0.400
I
D
=-1.1A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SOT23
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Relay and solenoid driving
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMP6A13FTA
ZXMP6A13FTC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
•
7P6
Top View
ISSUE 2 - JULY 2004
1
ZXMP6A13F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C
(b)
V
GS
=10V; T
A
=70°C
(b)
V
GS
=10V; T
A
=25°C
(a)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
LIMIT
-60
20
-1.1
-0.8
-0.9
-4.0
-1.2
-4.0
625
5
806
6.5
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
≤5
secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
ISSUE 2 - JULY 2004
2
ZXMP6A13F
CHARACTERISTICS
ISSUE 2 - JULY 2004
3
ZXMP6A13F
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
V
SD
t
rr
Q
rr
-0.85
22.6
23.2
-0.95
V
ns
nC
T
J
=25°C, I
S
=-0.8A,
V
GS
=0V
T
J
=25°C, I
F
=-0.9A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
1.6
2.3
13
5.8
2.4
5.1
0.7
0.7
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-30V,V
GS
=-10V,
I
D
=-0.9A
V
DS
=-30V,V
GS
=-5V,
I
D
=-0.9A
V
DD
=-30V, I
D
=-1A
R
G
6.0 , V
GS
=-10V
C
iss
C
oss
C
rss
233
17.4
9.6
pF
pF
pF
V
DS
=-30V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.8
-1.0
0.400
0.600
S
-60
-1
100
V
A
nA
V
I
D
=-250 A, V
GS
=0V
V
DS
=-60V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-0.9A
V
GS
=-4.5V, I
D
=-0.8A
V
DS
=-15V,I
D
=-0.9A
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JULY 2004
4
ZXMP6A13F
TYPICAL CHARACTERISTICS
ISSUE 2 - JULY 2004
5
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